Volume 47 Issue 11
Jan.  2019
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Zhang Mingxin, Nie Jinsong, Sun Ke, Han Min. Numerical analysis on thermal function of single crystal silicon irradiated by combined laser[J]. Infrared and Laser Engineering, 2018, 47(11): 1106011-1106011(8). doi: 10.3788/IRLA201847.1106011
Citation: Zhang Mingxin, Nie Jinsong, Sun Ke, Han Min. Numerical analysis on thermal function of single crystal silicon irradiated by combined laser[J]. Infrared and Laser Engineering, 2018, 47(11): 1106011-1106011(8). doi: 10.3788/IRLA201847.1106011

Numerical analysis on thermal function of single crystal silicon irradiated by combined laser

doi: 10.3788/IRLA201847.1106011
  • Received Date: 2018-06-05
  • Rev Recd Date: 2018-07-03
  • Publish Date: 2018-11-25
  • The numerical analysis was conducted on the temperature and stress fields of single crystal silicon irradiated by the combined laser by the finite element method. The damage effect of the single crystal silicon which was respectively irradiated by the combined laser and continuous laser was compared, which was under the condition that the average power density of combined laser was equal to the continuous laser. The results show that combined laser is more conducive to realize thermal damage of single crystal silicon than continuous laser. The Von Mises stress, axial stress and hoop stress in single crystal silicon is higher when the model is irradiated by the combined laser than when it is under continuous lasers. The combined laser damage in monocrystalline silicon is stronger than continuous laser.
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Numerical analysis on thermal function of single crystal silicon irradiated by combined laser

doi: 10.3788/IRLA201847.1106011
  • 1. State Key Laboratory of Pulsed Power Laser Technology,Electronic Engineering Institute,National University of Defense Technology,Hefei 230037,China

Abstract: The numerical analysis was conducted on the temperature and stress fields of single crystal silicon irradiated by the combined laser by the finite element method. The damage effect of the single crystal silicon which was respectively irradiated by the combined laser and continuous laser was compared, which was under the condition that the average power density of combined laser was equal to the continuous laser. The results show that combined laser is more conducive to realize thermal damage of single crystal silicon than continuous laser. The Von Mises stress, axial stress and hoop stress in single crystal silicon is higher when the model is irradiated by the combined laser than when it is under continuous lasers. The combined laser damage in monocrystalline silicon is stronger than continuous laser.

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