Volume 48 Issue 2
Feb.  2019
Turn off MathJax
Article Contents
Article Navigation >  Infrared and Laser Engineering  > 2019  >  48(2): 221002-0221002(7)

Zhou Zhenhui, Xu Xiangyan, Liu Hulin, Li Yan, Lu Yu, Qian Sen, Wei Yonglin, He Kai, Sai Xiaofeng, Tian Jinshou, Chen Ping. Simulation of InP/In0.53Ga0.47As/InP infrared photocathode with high quantum yield[J]. Infrared and Laser Engineering, 2019, 48(2): 221002-0221002(7). doi: 10.3788/IRLA201948.0221002
Citation: Zhou Zhenhui, Xu Xiangyan, Liu Hulin, Li Yan, Lu Yu, Qian Sen, Wei Yonglin, He Kai, Sai Xiaofeng, Tian Jinshou, Chen Ping. Simulation of InP/In0.53Ga0.47As/InP infrared photocathode with high quantum yield[J]. Infrared and Laser Engineering, 2019, 48(2): 221002-0221002(7). doi: 10.3788/IRLA201948.0221002
shu

Simulation of InP/In0.53Ga0.47As/InP infrared photocathode with high quantum yield

doi: 10.3788/IRLA201948.0221002
  • 1.

    Xi'an Institute of Optics and Precision Mechanics of Chinese Academy of Sciences,Xi'an 710119,China;

  • 2.

    University of Chinese Academy of Sciences,Beijing 100049,China;

  • 3.

    Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences,Xi'an 710119,China;

  • 4.

    Shool of Science,Xi'an Shiyou University,Xi'an 710065,China;

  • 5.

    Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China;

  • 6.

    State Key Laboratory of Particle Detection and Electronics,Beijing 100049,China

  • Received Date: 2018-09-05
  • Rev Recd Date: 2018-10-03
  • Publish Date: 2019-02-25
  • An InP/In0.53Ga0.47As/InP infrared photocathode model was established. The In0.53Ga0.47As absorber layer was designed as a multi-layer structure, the impurities of it were exponentially distributed by doping with different concentrations of the thin layers. The one-dimensional continuity equations and boundary conditions of the photoelectron in the absorber layer and the emissive layer were given and the probability that photoelectrons overcome the launch of the active layer barrier into the vacuum was calculated. The effects of absorber layer thickness, doping concentration and cathode bias voltage on the internal quantum efficiency of the cathode was simulated under the condition of picosecond response time, and then the law of the external quantum yield of the cathode was obtained with the above three factors. The results show that, when the doping concentration of the absorber layer changes within the range of 1015-1018 cm-3, The internal quantum efficiency change is very small; as the thickness of the absorber layer increases within 0.09-0.81 m, the internal quantum efficiency increases. As the external bias voltage increases, the internal quantum efficiency increases first and then tends to be stable. A set of cathode design parameters that could achieve both high quantum efficiency and fast time response were presented. Theoretically, an external quantum yield of 8.4% can be obtained for 1.55 m incident light, and the response time is 49 ps.
  • [1] Jin M C, Chen X L, Hao G H, et al. Research on quantum efficiency for reflection-mode InGaAs photocathodes with thin emission layer[J]. Applied Optics, 2015, 54(28):8332-8338.
    [2] Yang M Z, Jin M C, Chang B K. Spectral response of InGaAs photocathodes with different emission layers[J]. Applied Optics, 2016, 55(31):8732-8737.
    [3] Matsuyama T, Mukai M, Horinaka H, et al. High luminescence polarization of InGaAs-AlGaAs strained layer superlattice fabricated as a photocathode of spin-polarized electron source[J]. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes Review Papers, 2001, 40(11):6468-6472.
    [4] Yang M Z, Jin M C. Photoemission of reflection-mode InGaAs photocathodes after Cs,O activation and recaesiations[J]. Optical Materials, 2016, 62:499-504.
    [5] Smirnov K, Medzakovskiy V I, Davydov V V, et al. High sensitive InP emitter for InP/InGaAs heterostructures[J]. Journal of Physics:Conference Series, 2017, 917(6):062019.
    [6] Sachno V, Dolgyh A, Loctionov V. Image intensifier tube (I2) with 1.06-m InGaAs-photocathode[C]//SPIE, 2005, 5834:169-176.
    [7] Escher J S, Gregory P E, Hyder S B, et al. Transferred-electron photoemission to 1.65m from InGaAs[J]. Journal of Applied Physics, 1978, 49(4):2591-2592.
    [8] Li Jinmin, Guo Lihui, Hou Xun. Theoretical calculation of quantum efficiency for field-assisted InP/InGaAsP semiconductor photocathodes[J]. Acta Physica Sinica, 1992, 41(10):1672-1678. (in Chinese)
    [9] Jin M C, Chang B K, Cheng H C, et al. Research on quantum efficiency of transmission-mode InGaAs photocathode[J]. Optik, 2014, 125(10):2395-2399.
    [10] Li Jinmin, Guo Lihui, Hou Xun. Calculation of time response for field-assisted InP/InGaAsP/InP semiconductor photocathodes[J]. Chinese Science Bulletin, 1992, 37(7):598-601. (in Chinese)
    [11] Sun Qiaoxia, Xu Xiangyan, An Yingbo, et al. Numerical study on time response characteristics of InP/InGaAs/InP infrared photocathode[J]. Infrared and Laser Engineering, 2013, 42(12):3163-3167. (in Chinese)
    [12] Zou Jijun, Chang Benkang, Yang Zhi. Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes[J]. Acta Physica Sinica, 2007, 56(5):2992-2997.
    [13] Escher J S, Gregory P E, Maloney T J. Hot-electron attenuation length in Ag/InP Schottky barriers[J]. Journal of Vacuum Science and Technology, 1979, 16(5):1394-1397.
    [14] Su C Y, Spicer W E, Lindau I. Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces[J]. Journal of Applied Physics, 1983, 54(3):1413-1422.
    [15] Levinshtein M, Rumyantsev S, Shur M. Handbook Series on Semiconductor Parameters[M]. 2nd ed. London:World Scientific, 1999:62-88.
    [16] Simon S M. Physics of Semiconductor Devices[M]. New York:Wiley, 1980.
    [17] Levinshtein M, Rumyantsev S, Shur M. Handbook Series on Semiconductor Parameters[M]. 1st ed. London:World Scientific, 1999.
    [18] Jiao Gangcheng, Xu Xiaobing, Zhang Liandong, et al. InGaAs/InP photocathode grown by solid-source MBE[C]//SPIE, 2013, 8912:891216.
    [19] Chinen Kouyu, Minoru Niigaki, Masahiro Miyao, et al. GaAs transmission photocathode grown by MBE[J]. Japanese Journal of Applied Physics, 1980, 19(11):703-706.
    [20] Narayanan A A, Fisher D G. Negative electron affinity gallium arsenide photocathode grown by MBE[J]. Appl Phys, 1984, 56(6):1886-1887.
    [21] Bourree L E, Chasse D R, Thamban P L, et al. MBE grown InGaAs photocathodes[C]//SPIE, 2003, 4796:1-10.
    [22] Jin M C, Chang B K, Guo J, et al. Theoretical study on electronic and optical properties of Zn-doped In0.25Ga0.75As photocathodes[J]. Optical Review, 2016, 23(1):84-91.
    [23] Guo Jing, Chang Benkang, Wang Honggang, et al. Near-infrared photocathode In0.53Ga0.47As doped with zinc:A first principle study[J]. Optik, 2016, 127(3):1268-1271.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索
Get Citation
PDF
XML

Article Metrics

Article views(447) PDF downloads(39) Cited by()

Related
Proportional views

Simulation of InP/In0.53Ga0.47As/InP infrared photocathode with high quantum yield

doi: 10.3788/IRLA201948.0221002
  • 1. Xi'an Institute of Optics and Precision Mechanics of Chinese Academy of Sciences,Xi'an 710119,China;
  • 2. University of Chinese Academy of Sciences,Beijing 100049,China;
  • 3. Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences,Xi'an 710119,China;
  • 4. Shool of Science,Xi'an Shiyou University,Xi'an 710065,China;
  • 5. Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China;
  • 6. State Key Laboratory of Particle Detection and Electronics,Beijing 100049,China
  • Received Date: 2018-09-05
  • Rev Recd Date: 2018-10-03
  • Publish Date: 2019-02-25

Abstract: An InP/In0.53Ga0.47As/InP infrared photocathode model was established. The In0.53Ga0.47As absorber layer was designed as a multi-layer structure, the impurities of it were exponentially distributed by doping with different concentrations of the thin layers. The one-dimensional continuity equations and boundary conditions of the photoelectron in the absorber layer and the emissive layer were given and the probability that photoelectrons overcome the launch of the active layer barrier into the vacuum was calculated. The effects of absorber layer thickness, doping concentration and cathode bias voltage on the internal quantum efficiency of the cathode was simulated under the condition of picosecond response time, and then the law of the external quantum yield of the cathode was obtained with the above three factors. The results show that, when the doping concentration of the absorber layer changes within the range of 1015-1018 cm-3, The internal quantum efficiency change is very small; as the thickness of the absorber layer increases within 0.09-0.81 m, the internal quantum efficiency increases. As the external bias voltage increases, the internal quantum efficiency increases first and then tends to be stable. A set of cathode design parameters that could achieve both high quantum efficiency and fast time response were presented. Theoretically, an external quantum yield of 8.4% can be obtained for 1.55 m incident light, and the response time is 49 ps.

    HTML

Reference (23)

Catalog

    版权所有 © 2019 《红外与激光工程》编辑部｜ Address: 58 Zhonghuan West Road, Tianjin Airport Economic Zone｜ Post Code: 300308

    津ICP备19007885号-1

    Supported by: Beijing Renhe Information Technology Co. Ltd  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return