Volume 48 Issue 8
Aug.  2019
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Yuan Pei, Wang Yue, Wu Yuanda, An Junming, Zhu Lianqing. Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI[J]. Infrared and Laser Engineering, 2019, 48(8): 818004-0818004(7). doi: 10.3788/IRLA201948.0818004
Citation: Yuan Pei, Wang Yue, Wu Yuanda, An Junming, Zhu Lianqing. Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI[J]. Infrared and Laser Engineering, 2019, 48(8): 818004-0818004(7). doi: 10.3788/IRLA201948.0818004

Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI

doi: 10.3788/IRLA201948.0818004
  • Received Date: 2019-03-05
  • Rev Recd Date: 2019-04-10
  • Publish Date: 2019-08-25
  • Wavelength division multiplexers/demultiplexers and variable optical attenuators(VOAS) are key devices used in optical communication systems. In order to get their monolithic integrated chip with simple fabrication process and fast time response, and considering the possibility of it to integrate with other different optical devices, a 16-channel 200 GHz arrayed waveguide grating(AWG) multiplexer/demultiplexer was monolithically integrated with electro-absorption variable optical attenuators on a silicon-on-insulator (SOI) platform. The on-chip loss was less than 7 dB and the crosstalk was less than -22 dB. The power consumption of the electro-absorption VOA is 572.4 mW(106 mA, 5.4 V) at 20 dB attenuation. Besides, the device provides fast optical power attenuation, and in a 0-5 V square voltage, the rising/falling time of the VOA is 50.5 ns and 48 ns, respectively.
  • [1] Pan Zepeng, Fu Songnian, Lu Luzi, et al. On-chip cyclic-AWG-based 1212 silicon wavelength routing switches with minimized port-to-port insertion loss fluctuation[J]. Photonics Research, 2018, 6(5):380-384.
    [2] Liu Zhiming, Chen Kunfeng, Gao Yesheng, et al. Determination problem of mode effective refractive index in the free propagation region of AWG[J]. Infrared and Laser Engineering, 2013, 42(8):2146-2149. (in Chinese)
    [3] Chao I-Fen, Lee Chain-Hung. AWG-based WDM ring networks:high-performance and low-cost system designs[J]. Computer Networks, 2018, 145:64-75.
    [4] Akca B I, Doerr C R. Interleaved silicon nitride AWG spectrometers[J]. IEEE Photonics Technology Letters, 2019, 31(1):90-93.
    [5] Yuan Pei, Wang Yue, Wu Yuanda, et al. Variable optical attenuators based on SOI with a 3m to silicon layer[J]. Applied Optics, 2019, 58(17):4630-4636.
    [6] Nan Xueli, Zhang Binzhen, Yang Xin, et al. Design and implementation of MEMS switch broadband programmable step attenuator[J]. Infrared and Laser Engineering, 2016, 45(10):1020002. (in Chinese)
    [7] Huang Chongjia, Chan Erwin H W. Variable optical attenuators with ability to independently control two orthogonal linearly polarized light amplitudes[J]. Chinese Optics Letters, 2018, 16(4):042304.
    [8] Fang Qing, Song Junfeng, Zhang Gang, et al. Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform[J]. IEEE Photonics Technology Letters, 2009, 21(5):319-321.
    [9] Dai Hongqing, An Junming, Wang Yue, et al. monolithic integration of a silica-based 16-channel VMUX/VDMUX on quartz substrate[J]. Journal of Semiconductors, 2014, 35(10):104010.
    [10] Hidetaka Nishi, Tai Tsuchizawa, Toshifumi Watanabe, et al. Monolithic integration of a silica-based arrayed waveguide grating filter and silicon variable optical attenuators based on p-i-n carrier-injection structure[J]. Applied Physics Express, 2010, 3(10):102203.
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Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI

doi: 10.3788/IRLA201948.0818004
  • 1. Beijing Laboratory of Optical Fiber Sensing and System,Beijing Information Science & Technology University,Beijing 100016,China;
  • 2. State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
  • 3. Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

Abstract: Wavelength division multiplexers/demultiplexers and variable optical attenuators(VOAS) are key devices used in optical communication systems. In order to get their monolithic integrated chip with simple fabrication process and fast time response, and considering the possibility of it to integrate with other different optical devices, a 16-channel 200 GHz arrayed waveguide grating(AWG) multiplexer/demultiplexer was monolithically integrated with electro-absorption variable optical attenuators on a silicon-on-insulator (SOI) platform. The on-chip loss was less than 7 dB and the crosstalk was less than -22 dB. The power consumption of the electro-absorption VOA is 572.4 mW(106 mA, 5.4 V) at 20 dB attenuation. Besides, the device provides fast optical power attenuation, and in a 0-5 V square voltage, the rising/falling time of the VOA is 50.5 ns and 48 ns, respectively.

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