Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature

Li Jinlun; Cui Shaohui; Zhang Jing; Zhang Zhenwei; Zhang Bowen; Ni Haiqiao; Niu Zhichuan

doi:10.3788/IRLA201948.0919001

Volume 48 Issue 9

Oct. 2019

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Article Navigation > Infrared and Laser Engineering > 2019 > 48(9): 919001-0919001(7)

Li Jinlun, Cui Shaohui, Zhang Jing, Zhang Zhenwei, Zhang Bowen, Ni Haiqiao, Niu Zhichuan. Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature[J]. Infrared and Laser Engineering, 2019, 48(9): 919001-0919001(7). doi: 10.3788/IRLA201948.0919001

Citation:

Li Jinlun, Cui Shaohui, Zhang Jing, Zhang Zhenwei, Zhang Bowen, Ni Haiqiao, Niu Zhichuan. Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature[J]. Infrared and Laser Engineering, 2019, 48(9): 919001-0919001(7). doi: 10.3788/IRLA201948.0919001

Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature

doi: 10.3788/IRLA201948.0919001

1.
Department of Missile Engineering,Shijiazhuang Campus,Army Engineering University,PLA,Shijiazhuang 050003,China;
2.
State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
3.
The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi'an 710071,China;
4.
Key Laboratory of THz Optoelectronics,Ministry of Education,Department of Physics,Capital Normal University,Beijing 100048,China;
5.
Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
6.
College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

Received Date: 2019-05-05
Rev Recd Date: 2019-06-12
Publish Date: 2019-09-25

Abstract

InP-based HEMT samples were prepared by molecular beam epitaxy(MBE). The sample mobility at room temperature reached 10 289 cm2/(Vs). The terahertz detector coupled with a bow-tie antenna was fabricated by photolithography, etching, magnetron sputtering, spot welding. The bow-tie antenna used in the device was optimized by simulation with HFSS, so that the optimized antenna parameter of S11 was -40 dB, the voltage standing wave ratio(VSWR) was 1.15, gain was 6 dB and impedance matching with the two-dimensional electronic gas(2DEG) channel. The device was measured by VDI's 0.3 THz Schottky diode terahertz source. The measurement results show that the device noise equivalent power (NEP) is 4 nW/Hz1/2 at room temperature, and the detection response rate is 46 V/W, the device response time is better than 330 s.
- terahertz detector,
- HEMT,
- InP,
- bow-tie antenna,
- excellent beam quality

References

[1]	Cao Juncheng. Semiconductor Terahertz Sources, Detectors and Applications[M]. Beijing:Science Press, 2012:1. (in Chinese)曹俊诚. 半导体太赫兹源、探测器与应用[M]. 北京:科学出版社, 2012:1.
[2]	Qin Hua, Huang Yongdan, Sun Jiandong, et al. Terahertz-wave devices based on plasmons in two-dimensional electron gas[J]. Chinese Optics, 2017, 10(1):51-66. (in Chinese)秦华, 黄永丹, 孙建东, 等. 二维电子气等离激元太赫兹波器件[J]. 中国光学, 2017, 10(1):51-66.
[3]	Li Jing, Zhang Wen, Miao Wei, et al. Development of ultra high sensitivity superconducting THz detectors[J]. Chinese Optics, 2017, 10(1):122-130. (in Chinese)李婧, 张文, 缪巍, 等. 超高灵敏度太赫兹超导探测技术发展[J]. 中国光学, 2017, 10(1):122-130.
[4]	Zhang Jingshui, Kong Lingqin, Dong Liquan, et al. Terahertz CMOS transistor model and experimental analysis[J]. Optics and Precision Engineering, 2017, 25(12):3128-3136. (in Chinese)张镜水, 孔令琴, 董立泉, 等. 太赫兹CMOS场效应管模型及实验分析[J]. 光学精密工程, 2017, 25(12):3128-3136.
[5]	Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor:New mechanism of plasma wave generation by dc current[J]. Physical Review Letters, 1993, 71(15):2465-2468.
[6]	Wang Lin, Chen Xiaoshuang, Hu Weida, et al. The plasmonic resonant absorption in GaN double-channel high electron mobility transistors[J]. Applied Physics Letters, 2011, 99(6):063502.
[7]	Guo Nan, Hu Weida, Chen Xiaoshuang, et al. Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates[J]. Optics Express, 2013, 21(2):1606-1614.
[8]	Lu Jianqiang, Shur M S, Hesler J L, et al. Terahertz detector utilizing two-dimensional electronic fluid[J]. IEEE Electron Device Letters, 1998, 19(10):373-375.
[9]	Wang Linhua, Yuan Minghui, Huang Hui, et al. Recognition of edge object of human body in THz security inspection system[J]. Infrared and Laser Engineering, 2017, 46(11):1125002. (in Chinese)王林华, 袁明辉, 黄慧, 等. 太赫兹安检系统人体图像边缘物体识别[J]. 红外与激光工程, 2017, 46(11):1125002.
[10]	Zhang Zhengping. New developments of solid state microwave, millimeter-wave, THz devices and circuits (continued)[J]. Semiconductor Technology, 2012, 36(1):897-904. (in Chinese)赵正平. 固态微波毫米波、太赫兹器件与电路的新进展(续)[J]. 半导体技术, 2012, 36(1):897-904.
[11]	Lim B, Statham S, Misra S, et al. The radiometer atmospheric CubeSat experiment (RACE) pre-launch performance[C]//Microwave Symposium. IEEE, 2015.
[12]	Li Jinlun, Cui Shaohui, Xu Jianxing, et al. Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector[J]. Chinese Physics B, 2018, 27(4):047101.
[13]	Tong Jinchao, Huang Jingguo, Huang Zhiming. New type terahertz/sub-millimeter wave detector based on InGaAs layers[J]. Infrared and Laser Engineering, 2014, 43(10):3347-3351. (in Chinese)童劲超, 黄敬国, 黄志明. 基于铟镓砷材料的新型太赫兹/亚毫米波探测器研究[J]. 红外与激光工程, 2014, 43(10):3347-3351.
[14]	Clawson A R. Guide to references on Ⅲ-V semiconductor chemical etching[J]. Materials Science and Engineering R:Reports, 2001, 31(1-6):1-438.
[15]	Yang Xinxin, Sun Jiandong, Qin Hua. Detection and analysis of the responsivity and NEP for HEMT terahertz detectors[J]. Micronanoelectronic Technology, 2013, 50(2):69-73. (in Chinese)杨昕昕, 孙建东, 秦华. HEMT太赫兹探测器响应度和NEP的检测与分析[J]. 微纳电子技术, 2013, 50(2):69-73.

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通讯作者: 陈斌, bchen63@163.com

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Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature

1. Department of Missile Engineering,Shijiazhuang Campus,Army Engineering University,PLA,Shijiazhuang 050003,China;

2. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;

3. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi'an 710071,China;

4. Key Laboratory of THz Optoelectronics,Ministry of Education,Department of Physics,Capital Normal University,Beijing 100048,China;

5. Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;

6. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

Received Date: 2019-05-05

Rev Recd Date: 2019-06-12

Publish Date: 2019-09-25

Key words:

Abstract: InP-based HEMT samples were prepared by molecular beam epitaxy(MBE). The sample mobility at room temperature reached 10 289 cm2/(Vs). The terahertz detector coupled with a bow-tie antenna was fabricated by photolithography, etching, magnetron sputtering, spot welding. The bow-tie antenna used in the device was optimized by simulation with HFSS, so that the optimized antenna parameter of S11 was -40 dB, the voltage standing wave ratio(VSWR) was 1.15, gain was 6 dB and impedance matching with the two-dimensional electronic gas(2DEG) channel. The device was measured by VDI's 0.3 THz Schottky diode terahertz source. The measurement results show that the device noise equivalent power (NEP) is 4 nW/Hz1/2 at room temperature, and the detection response rate is 46 V/W, the device response time is better than 330 s.

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Reference (15)

[1]	Cao Juncheng. Semiconductor Terahertz Sources, Detectors and Applications[M]. Beijing:Science Press, 2012:1. (in Chinese)曹俊诚. 半导体太赫兹源、探测器与应用[M]. 北京:科学出版社, 2012:1.
[2]	Qin Hua, Huang Yongdan, Sun Jiandong, et al. Terahertz-wave devices based on plasmons in two-dimensional electron gas[J]. Chinese Optics, 2017, 10(1):51-66. (in Chinese)秦华, 黄永丹, 孙建东, 等. 二维电子气等离激元太赫兹波器件[J]. 中国光学, 2017, 10(1):51-66.
[3]	Li Jing, Zhang Wen, Miao Wei, et al. Development of ultra high sensitivity superconducting THz detectors[J]. Chinese Optics, 2017, 10(1):122-130. (in Chinese)李婧, 张文, 缪巍, 等. 超高灵敏度太赫兹超导探测技术发展[J]. 中国光学, 2017, 10(1):122-130.
[4]	Zhang Jingshui, Kong Lingqin, Dong Liquan, et al. Terahertz CMOS transistor model and experimental analysis[J]. Optics and Precision Engineering, 2017, 25(12):3128-3136. (in Chinese)张镜水, 孔令琴, 董立泉, 等. 太赫兹CMOS场效应管模型及实验分析[J]. 光学精密工程, 2017, 25(12):3128-3136.
[5]	Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor:New mechanism of plasma wave generation by dc current[J]. Physical Review Letters, 1993, 71(15):2465-2468.
[6]	Wang Lin, Chen Xiaoshuang, Hu Weida, et al. The plasmonic resonant absorption in GaN double-channel high electron mobility transistors[J]. Applied Physics Letters, 2011, 99(6):063502.
[7]	Guo Nan, Hu Weida, Chen Xiaoshuang, et al. Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates[J]. Optics Express, 2013, 21(2):1606-1614.
[8]	Lu Jianqiang, Shur M S, Hesler J L, et al. Terahertz detector utilizing two-dimensional electronic fluid[J]. IEEE Electron Device Letters, 1998, 19(10):373-375.
[9]	Wang Linhua, Yuan Minghui, Huang Hui, et al. Recognition of edge object of human body in THz security inspection system[J]. Infrared and Laser Engineering, 2017, 46(11):1125002. (in Chinese)王林华, 袁明辉, 黄慧, 等. 太赫兹安检系统人体图像边缘物体识别[J]. 红外与激光工程, 2017, 46(11):1125002.
[10]	Zhang Zhengping. New developments of solid state microwave, millimeter-wave, THz devices and circuits (continued)[J]. Semiconductor Technology, 2012, 36(1):897-904. (in Chinese)赵正平. 固态微波毫米波、太赫兹器件与电路的新进展(续)[J]. 半导体技术, 2012, 36(1):897-904.
[11]	Lim B, Statham S, Misra S, et al. The radiometer atmospheric CubeSat experiment (RACE) pre-launch performance[C]//Microwave Symposium. IEEE, 2015.
[12]	Li Jinlun, Cui Shaohui, Xu Jianxing, et al. Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector[J]. Chinese Physics B, 2018, 27(4):047101.
[13]	Tong Jinchao, Huang Jingguo, Huang Zhiming. New type terahertz/sub-millimeter wave detector based on InGaAs layers[J]. Infrared and Laser Engineering, 2014, 43(10):3347-3351. (in Chinese)童劲超, 黄敬国, 黄志明. 基于铟镓砷材料的新型太赫兹/亚毫米波探测器研究[J]. 红外与激光工程, 2014, 43(10):3347-3351.
[14]	Clawson A R. Guide to references on Ⅲ-V semiconductor chemical etching[J]. Materials Science and Engineering R:Reports, 2001, 31(1-6):1-438.
[15]	Yang Xinxin, Sun Jiandong, Qin Hua. Detection and analysis of the responsivity and NEP for HEMT terahertz detectors[J]. Micronanoelectronic Technology, 2013, 50(2):69-73. (in Chinese)杨昕昕, 孙建东, 秦华. HEMT太赫兹探测器响应度和NEP的检测与分析[J]. 微纳电子技术, 2013, 50(2):69-73.

Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature

doi: 10.3788/IRLA201948.0919001

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