Tian Yaoling, He Yue, Huang Kun, Jiang Jun, Miao Li. High power 110 GHz balanced Schottky diode frequency doubler[J]. Infrared and Laser Engineering, 2019, 48(9): 919002-0919002(6). doi: 10.3788/IRLA201948.0919002
| Citation:
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Tian Yaoling, He Yue, Huang Kun, Jiang Jun, Miao Li. High power 110 GHz balanced Schottky diode frequency doubler[J]. Infrared and Laser Engineering, 2019, 48(9): 919002-0919002(6). doi: 10.3788/IRLA201948.0919002
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High power 110 GHz balanced Schottky diode frequency doubler
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Tian Yaoling1,2
,
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He Yue1,2
,
,
,
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Huang Kun1,2
,
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Jiang Jun1,2
,
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Miao Li1,2
- 1.
Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China;
- 2.
Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China
- Received Date: 2019-05-11
- Rev Recd Date:
2019-06-21
- Publish Date:
2019-09-25
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Abstract
Generation of power at higher terahertz frequencies typically requires several stages of multiplication, which put forward the demand for high power devices at earlier stages. For higher power capacity and efficiency, the doubler circuit was realized based on ceramic substrates with high thermal conductivity. Moreover, with the accurate Schottky diode equal model, a high power 110 GHz balanced doubler was analyzed and designed in HFSS and ADS using symmetry boundary condition. With an input power of 28 dBm, the measured results showed that the maximum output power and efficiency of the doubler range from 102 to 114.2 GHz are 108 mW and 17.6% respectively, providing sufficient power for the chain.
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