Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation

Li Jianlin; Zhang Shaoyu; Sun Juan; Xie Gang; Zhou Jiading; Ma Yingting

doi:10.3788/IRLA201948.1004003

Volume 48 Issue 10

Oct. 2019

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Li Jianlin, Zhang Shaoyu, Sun Juan, Xie Gang, Zhou Jiading, Ma Yingting. Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation[J]. Infrared and Laser Engineering, 2019, 48(10): 1004003-1004003(9). doi: 10.3788/IRLA201948.1004003

Citation:

Li Jianlin, Zhang Shaoyu, Sun Juan, Xie Gang, Zhou Jiading, Ma Yingting. Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation[J]. Infrared and Laser Engineering, 2019, 48(10): 1004003-1004003(9). doi: 10.3788/IRLA201948.1004003

Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation

doi: 10.3788/IRLA201948.1004003

1.
Kunming Institute of Physics,Kunming 650223,China

Received Date: 2019-06-11
Rev Recd Date: 2019-07-21
Publish Date: 2019-10-25

Abstract

HgCdTe FPA pixel performance of high-reliability and long-life is worse, degraded and failed over time in service life. To determine its storage life, the test time should be shortened by class B test, the constant stress of ALT or ADT should be greater than that of high temperature +90℃,2 160 h. The high acceleration stress screening test HASS should be forced to develop the defect to expose the possible early failure before the quantitative acceleration test. According to the high temperature storage test performance degradation test data of the HgCdTe FPA Dewar assembly, the statistical model was used to convert the failure time or performance parameter degradation characteristics. The storage life was greater than 50 years under rated stress level st +25℃. More than 3 000 h the high temperature storage test results show that the pixel performance tends to be better before 1 500 h because residual technological stress is released. Baking for 20 days in a vacuum environment of high temperature +80℃ does not cause deterioration of pixel performance.
- infrared detectors,
- HgCdTe,
- accelerated degradation test,
- storage life,
- reliability

References

[1]	Per W Schmidt. NRL hybrid reliability physics of failure initial study[R]. ADA217986, 1990.
[2]	John W Marciniec. Hybrid PV HgCdTe IR detectors technology reliability and failure physics program-environmental stress testing plan[R]. ADA191l65, 1987.
[3]	Rolin K. Asatourian. Infrared focal plane array storage life assessment by accelerated aging[J]. Quality and Reliability Engng Int, 1998, 14:425-432.
[4]	Xavier Breniere, Philippe Tribolet. IR detectors design and approach for tactical applications with high reliability without maintenance[C]//SPIE, 2008, 6940:69400H-1-13.
[5]	Pieruschka E. Relation between lifetime distribution and the stress level[R]. LMSD-400800, Sunnyvale, California:Lockheed Missile and Space Division, 1961.
[6]	Nelson W. Accelerated Testing:Statistical Methods, Test Plans, and Data Analysis[M]. New York:John Wiley Press, 1990.
[7]	Hou Zhijin, Fu Li, Wang Wei, et al. Study on connected defective elements in focal plane array identification by response and crosstalk[J]. Infrared and Laser Engineering, 2017, 46(4):0420002. (in Chinese)候治锦, 傅莉, 王巍, 等. 用响应和串音识别焦平面探测器相连缺陷元研究[J]. 红外与激光工程, 2017, 46(4):0420002.
[8]	Hao Lichao, Huang Aibo, Lai Canxiong, et al. Discussion of reliability analysis on IRFPAs by bad pixel[J]. Infrared and Laser Engineering, 2016, 45(5):0504004. (in Chinese)郝立超, 黄爱波, 赖灿雄, 等. 盲元作为红外焦平面可靠性分析手段的探讨[J]. 红外与激光工程, 2016, 45(5):0504004.
[9]	Wang Wei, Fan Yangyu, Si Junjie, et al. Types and determination of bad pixels in IRFPA[J]. Infrared and Laser Engineering, 2012, 41(9):2261-2264. (in Chinese)王巍, 樊养余, 司俊杰, 等. 红外焦平面阵列盲元类型与判别[J]. 红外与激光工程, 2012, 41(9):2261-2264.
[10]	Hou Zhijin, Fu Li, Lu Zhengxiong, et al. Causes and characteristics of indium bump defects in InSb focal plane array[J]. Journal of Infrared Millimeter Waves, 2018, 37(3):325-331. (in Chinese)候治锦, 傅莉, 鲁正雄, 等. InSb面阵探测器铟柱缺陷成因与特征研究[J]. 红外与毫米波学报, 2018, 37(3):325-331.
[11]	Antoni Rogalski. Infrared Detectors[M]. 2nd ed. Zhou Haixian, Cheng Yunfang, translated. Beijing:China Machine Press, 2014:641, 406, 369. (in Chinese)罗格尔斯基. 红外探测器[M]. 第2版. 周海宪, 程云芳, 译. 北京:机械工业出版社, 2014:641, 406, 369.
[12]	Chen Xing. Research on the related technology of HgCdTe infrared focal plane detector reliability[D]. Shanghai:Shanghai Institute of Techcial Physics, Chinese Academy of Sciences, 2014:12. (in Chinese)陈星. 碲镉汞红外焦平面探测器可靠性相关技术研究[D]. 上海:中国科学院上海技术物理研究所, 2014:12.
[13]	Zhang Wenwei, Li Hongmin. Induction treatment of environmental profile of natural storage station[J]. Equipment Environmental Engineering, 2011, 8(1):61-81. (in Chinese)张文伟, 李宏民. 自然贮存场自然环境剖面归纳处理[J]. 装备环境工程, 2011, 8(1):61-81.
[14]	Nitz H M, Ganschow O, Kaiser U, et al. Quasi-simultaneous SIMS, AES, XPS, and TDMS study of preferntial sputtering, diffusion, and mercury evaporation in CdxHg1-xTe[J]. Surface Science, 1981, 104(2/3):365-383.
[15]	Mestechkin A, Lee D L, Cunningham B T, et al. Bake stability of long-wavelength infrared HgCdTe photodiodes[J]. Journal of Electronic Materials, 1995, 24:1183-1187.
[16]	Jiang Renyuan, Zhang Xingtang, Yang Yichun. Study on accelerated life test of function degenerating type by temperature stress[J]. Journal of Nanjing University of Science and Technology, 2000, 24(6):523-527. (in Chinese)姜仁元, 张兴唐, 杨亦春. 温度应力下功能退化型加速寿命试验问题研究[J]. 南京理工大学学报, 2000, 24(6):523-527.
[17]	Yurkowsky W, Schafter R E, Finkelstein J M. Accelerated testing technology. Technical Report No. RADC-TR-67-420[R]. Rome Air Development Center, 1967.
[18]	Deng Aimin, Chen Xun, Zhang Chunhua, et al. Reliability assessment based on performance degradation data[J]. Journal of Astronautics, 2006, 27(3):546-552. (in Chinese)邓爱民, 陈循, 张春华, 等. 基于性能退化数据的可靠性评估[J]. 宇航学报, 2006, 27(3):546-552.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation

1. Kunming Institute of Physics,Kunming 650223,China

Received Date: 2019-06-11

Rev Recd Date: 2019-07-21

Publish Date: 2019-10-25

Key words:

Abstract: HgCdTe FPA pixel performance of high-reliability and long-life is worse, degraded and failed over time in service life. To determine its storage life, the test time should be shortened by class B test, the constant stress of ALT or ADT should be greater than that of high temperature +90℃,2 160 h. The high acceleration stress screening test HASS should be forced to develop the defect to expose the possible early failure before the quantitative acceleration test. According to the high temperature storage test performance degradation test data of the HgCdTe FPA Dewar assembly, the statistical model was used to convert the failure time or performance parameter degradation characteristics. The storage life was greater than 50 years under rated stress level st +25℃. More than 3 000 h the high temperature storage test results show that the pixel performance tends to be better before 1 500 h because residual technological stress is released. Baking for 20 days in a vacuum environment of high temperature +80℃ does not cause deterioration of pixel performance.

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Reference (18)

[1]	Per W Schmidt. NRL hybrid reliability physics of failure initial study[R]. ADA217986, 1990.
[2]	John W Marciniec. Hybrid PV HgCdTe IR detectors technology reliability and failure physics program-environmental stress testing plan[R]. ADA191l65, 1987.
[3]	Rolin K. Asatourian. Infrared focal plane array storage life assessment by accelerated aging[J]. Quality and Reliability Engng Int, 1998, 14:425-432.
[4]	Xavier Breniere, Philippe Tribolet. IR detectors design and approach for tactical applications with high reliability without maintenance[C]//SPIE, 2008, 6940:69400H-1-13.
[5]	Pieruschka E. Relation between lifetime distribution and the stress level[R]. LMSD-400800, Sunnyvale, California:Lockheed Missile and Space Division, 1961.
[6]	Nelson W. Accelerated Testing:Statistical Methods, Test Plans, and Data Analysis[M]. New York:John Wiley Press, 1990.
[7]	Hou Zhijin, Fu Li, Wang Wei, et al. Study on connected defective elements in focal plane array identification by response and crosstalk[J]. Infrared and Laser Engineering, 2017, 46(4):0420002. (in Chinese)候治锦, 傅莉, 王巍, 等. 用响应和串音识别焦平面探测器相连缺陷元研究[J]. 红外与激光工程, 2017, 46(4):0420002.
[8]	Hao Lichao, Huang Aibo, Lai Canxiong, et al. Discussion of reliability analysis on IRFPAs by bad pixel[J]. Infrared and Laser Engineering, 2016, 45(5):0504004. (in Chinese)郝立超, 黄爱波, 赖灿雄, 等. 盲元作为红外焦平面可靠性分析手段的探讨[J]. 红外与激光工程, 2016, 45(5):0504004.
[9]	Wang Wei, Fan Yangyu, Si Junjie, et al. Types and determination of bad pixels in IRFPA[J]. Infrared and Laser Engineering, 2012, 41(9):2261-2264. (in Chinese)王巍, 樊养余, 司俊杰, 等. 红外焦平面阵列盲元类型与判别[J]. 红外与激光工程, 2012, 41(9):2261-2264.
[10]	Hou Zhijin, Fu Li, Lu Zhengxiong, et al. Causes and characteristics of indium bump defects in InSb focal plane array[J]. Journal of Infrared Millimeter Waves, 2018, 37(3):325-331. (in Chinese)候治锦, 傅莉, 鲁正雄, 等. InSb面阵探测器铟柱缺陷成因与特征研究[J]. 红外与毫米波学报, 2018, 37(3):325-331.
[11]	Antoni Rogalski. Infrared Detectors[M]. 2nd ed. Zhou Haixian, Cheng Yunfang, translated. Beijing:China Machine Press, 2014:641, 406, 369. (in Chinese)罗格尔斯基. 红外探测器[M]. 第2版. 周海宪, 程云芳, 译. 北京:机械工业出版社, 2014:641, 406, 369.
[12]	Chen Xing. Research on the related technology of HgCdTe infrared focal plane detector reliability[D]. Shanghai:Shanghai Institute of Techcial Physics, Chinese Academy of Sciences, 2014:12. (in Chinese)陈星. 碲镉汞红外焦平面探测器可靠性相关技术研究[D]. 上海:中国科学院上海技术物理研究所, 2014:12.
[13]	Zhang Wenwei, Li Hongmin. Induction treatment of environmental profile of natural storage station[J]. Equipment Environmental Engineering, 2011, 8(1):61-81. (in Chinese)张文伟, 李宏民. 自然贮存场自然环境剖面归纳处理[J]. 装备环境工程, 2011, 8(1):61-81.
[14]	Nitz H M, Ganschow O, Kaiser U, et al. Quasi-simultaneous SIMS, AES, XPS, and TDMS study of preferntial sputtering, diffusion, and mercury evaporation in CdxHg1-xTe[J]. Surface Science, 1981, 104(2/3):365-383.
[15]	Mestechkin A, Lee D L, Cunningham B T, et al. Bake stability of long-wavelength infrared HgCdTe photodiodes[J]. Journal of Electronic Materials, 1995, 24:1183-1187.
[16]	Jiang Renyuan, Zhang Xingtang, Yang Yichun. Study on accelerated life test of function degenerating type by temperature stress[J]. Journal of Nanjing University of Science and Technology, 2000, 24(6):523-527. (in Chinese)姜仁元, 张兴唐, 杨亦春. 温度应力下功能退化型加速寿命试验问题研究[J]. 南京理工大学学报, 2000, 24(6):523-527.
[17]	Yurkowsky W, Schafter R E, Finkelstein J M. Accelerated testing technology. Technical Report No. RADC-TR-67-420[R]. Rome Air Development Center, 1967.
[18]	Deng Aimin, Chen Xun, Zhang Chunhua, et al. Reliability assessment based on performance degradation data[J]. Journal of Astronautics, 2006, 27(3):546-552. (in Chinese)邓爱民, 陈循, 张春华, 等. 基于性能退化数据的可靠性评估[J]. 宇航学报, 2006, 27(3):546-552.

Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation

doi: 10.3788/IRLA201948.1004003

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References

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