Volume 48 Issue 10
Oct.  2019
Turn off MathJax
Article Contents

Wei Xiaoying, Li Xinyuan, Wu Huanbao, Wang Tianhe, Jia Xiaodong. Research of photo-excited in-situ terahertz wave modification properties of vanadium oxide thin films[J]. Infrared and Laser Engineering, 2019, 48(10): 1017005-1017005(7). doi: 10.3788/IRLA201948.1017005
Citation: Wei Xiaoying, Li Xinyuan, Wu Huanbao, Wang Tianhe, Jia Xiaodong. Research of photo-excited in-situ terahertz wave modification properties of vanadium oxide thin films[J]. Infrared and Laser Engineering, 2019, 48(10): 1017005-1017005(7). doi: 10.3788/IRLA201948.1017005

Research of photo-excited in-situ terahertz wave modification properties of vanadium oxide thin films

doi: 10.3788/IRLA201948.1017005
  • Received Date: 2019-05-05
  • Rev Recd Date: 2019-06-15
  • Publish Date: 2019-10-25
  • The vanadium oxide thin film with high quality was prepared on c-Al2O3 substrate for the first time by magnetron sputtering with rapid thermal process(RTP). Firstly, the surface particle size of the film was uniform, the surface root mean square roughness was about 16.75 nm, the major components of the film were VO2 and V2O5, V4+ content was about 78.59%. The prepared vanadium oxide thin films had the stable property of thermal-excited phase transition; Secondly, the terahertz transmission modulation was characterized by terahertz time-domain spectroscopy system(THz-TDS). The result indicated that the transmission ratios of the film increased with increasing optical excitation power; Finally, the amplitudes of the THz waves for vanadium oxide without any obvious fluctuation after the optimized process conditions of preparation and transmission ratios were nearly stable within repeated testing by in-site test, could be widely used for THz devices such as modulators and switches.
  • [1] Federici J, Moeller L. Eview of terahertz and subterahertz wireless communications[J]. Appl Phys, 2010, 107(11):111101.
    [2] Siegel P H. Terahertz technology[J]. IEEE Transactions on Microwave Theory and Techniques, 2002, 50(3):910-928.
    [3] Liu Zhaoyang, Liu Liyuan, Wu Nanjian. Imaging system based on CMOS terahertz detector[J]. Infrared and Laser Engineering, 2017, 46(1):01250001.(in Chinese)
    [4] Luo Muchang, Sun Jiandong, Zhang Zhipeng, et al. Terahertz focal plane imaging array sensor based on AlGaN/GaN field effect transistors[J]. Infrared and Laser Engineering, 2018, 47(3):0320001. (in Chinese)
    [5] Kosugi T, Shibata T, Enoki T, et al. A 120 GHz millimeter wave MMIC chipset for future broad band wireless application[J]. IEEE MTT-S Int. Microw Symp Dig, 2003, 2(1):129-132.
    [6] Singh R, Chowdhury D R,Xiong J, et al. Influence of film thickness in THz active metamaterial devices:A comparison between superconductor and metal split-ring resonators[J]. Appl Phys Lett, 2013, 103(6):061117.
    [7] Padilla W J, Taylor A J, Highstrete C, et al. Dynamical electric and magnetic metamaterial response at terahertz frequencies[J]. Phys Rev Lett, 2006, 96:107401.
    [8] Chae B G, Kim H T, Youn D H. Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse[J]. Physica B:Condensed Matter, 2005, 369(1-4):76-80.
    [9] Dejene F B, Ocaya R O. Electrical, optical and structural properties of pure and gold-coated VO2 thin films on quartz substrate[J]. Current Applied Physics, 2010, 10(2):508-512.
    [10] Rini M, Cavalleri A, Schoenlein R W. Photoinduced phase transition in VO2 nanocrystals:ultrafast control of surface-plasmon resonance[J]. Optics Letters, 2005, 30(5):558-560.
    [11] Wen Q Y, Zhang H W, Yang Q H, et al. Terahertz metamaterials with VO2 cut-wires for thermal tenability[J]. Appl Phys Lett, 2010, 97(2):021111.
    [12] Zhao Y, Lee J H, Zhu Y H, et al. Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates[J]. J Appl Phys, 2012, 111(5):053533.
    [13] Pashkin A, Kubler C, Ehrke H, et al. Ultrafast insulator-metal phase transition in VO2 studied by multiterahertz spectroscopy[J]. Phys Rev B, 2011, 83(19):195120.
    [14] Shi Q W, W X Huang, J Wu, et al. Terahertz transmission characteristics across the phase transition in VO2 films deposited on Si, sapphire, and SiO2 substrates[J]. J Appl Phys, 2012, 112(3):033523.
    [15] Mandal P, Speck A, Ko C, et al. Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition[J]. Opt Lett, 2011, 36(10):1927-1929.
    [16] Chen H T, Padilla W J, Ozide J M, et al. Active terahertz metamaterial devices[J]. Nature, 2006, 444(7119):597-600.
    [17] Chen H T, Padilla W J, Cich M J, et al. A metamaterial solid-state terahertz phase modulator[J]. Nat Photonics, 2009, 3(3):148-151.
    [18] Chan W L, Chen H, Taylor A J, et al. A spatial light modulator for terahertz beams[J]. Appl Phys Lett, 2009, 94(21):213511.
    [19] Jeong Y G, Bernien H, Kyoung J S. Electrical control of terahertz nano antennas on VO2 thin film[J]. Opt Express, 2011, 19(22):21211-21215.
    [20] Rini M, Tobey R, Dean N, et al. Control of the electronic phase of a manganite by mode-selective vibrational excitation[J]. Nature (London), 2007, 444:72-74.
    [21] Kbler C, Ehrke H, Huber R, et al. Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2[J]. Phys Rev Lett, 2007, 99:116401.
    [22] Nakajima M, akuboN T, Hiroi Z, et al. Study of photo-induced phenomena in VO2 by terahertz pump-probe spectroscopy[J]. Journal of Luminescence, 2009, 129(12):1802-1805.
    [23] Chen Z, Wen Q Y, Dong K, et al. Ultrafast and broadband terahertz switching based on photo-induced phase transition in vanadium dioxide films[J]. Chin Phys Lett, 2013, 30(1):017101.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Article Metrics

Article views(603) PDF downloads(41) Cited by()

Related
Proportional views

Research of photo-excited in-situ terahertz wave modification properties of vanadium oxide thin films

doi: 10.3788/IRLA201948.1017005
  • 1. Tianjin Jinhang Institute of Technical Physics,Tianjin 300308,China;
  • 2. Academy of Aerospace Solid Propulsion Technology,Xi'an 710025,China

Abstract: The vanadium oxide thin film with high quality was prepared on c-Al2O3 substrate for the first time by magnetron sputtering with rapid thermal process(RTP). Firstly, the surface particle size of the film was uniform, the surface root mean square roughness was about 16.75 nm, the major components of the film were VO2 and V2O5, V4+ content was about 78.59%. The prepared vanadium oxide thin films had the stable property of thermal-excited phase transition; Secondly, the terahertz transmission modulation was characterized by terahertz time-domain spectroscopy system(THz-TDS). The result indicated that the transmission ratios of the film increased with increasing optical excitation power; Finally, the amplitudes of the THz waves for vanadium oxide without any obvious fluctuation after the optimized process conditions of preparation and transmission ratios were nearly stable within repeated testing by in-site test, could be widely used for THz devices such as modulators and switches.

Reference (23)

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return