Li Xiang, Wang Hong, Qiao Zhongliang, Zhang Yu, Niu Zhichuan, Tong Cunzhu, Liu Chongyang. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054. doi: 10.3788/IRLA20201054
Citation:
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Li Xiang, Wang Hong, Qiao Zhongliang, Zhang Yu, Niu Zhichuan, Tong Cunzhu, Liu Chongyang. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054. doi: 10.3788/IRLA20201054
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Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)
- 1.
Temasek Laboratories, Nanyang Technological University, Singapore 637553, Singapore
- 2.
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- 3.
School of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
- 4.
State Key Lab for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 5.
State Key Lab of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Received Date: 2020-10-15
- Rev Recd Date:
2020-11-20
Available Online:
2021-01-14
- Publish Date:
2020-12-24
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Abstract
Multi-gigahertz optical pulse trains generated from mode-locked semiconductor lasers are promising for a number of applications in many areas. For most of these applications, a fixed and stable pulse repetition frequency is necessary. Since the repetition frequency of such lasers is primarily determined by the effective refractive index of the laser waveguide and the laser cavity length, uncertainties during device fabrication as well as cleaving process may bring deviations to the repetition frequency. To gain better knowledge of how working conditions of such lasers effect their repetition frequency and thus compensate the above-mentioned deviations, a novel 2 µm InGaSb/AlGaAsSb single quantum well (SQW) mode-locked laser (MLL) was presented in this work. It has a two-section configuration (gain section and saturable absorber section separated by an electrical isolation region) and stable mode locking was achieved in this laser under a variety of bias conditions up to 60 ℃. Repetition frequency variations of this mode-locked laser with bias condition (gain section current Ig, absorber section voltage Va) and working temperature (T) were systematically recorded, and the mechanisms behind these variations were analyzed. It is believed that this work enables us to have a better understanding of passively mode-locked semiconductor lasers and is of interest to better meet the application-required frequencies.
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References
[1]
|
Rafailov E U, Cataluna M A, Sibbett W. Mode-locked quantum-dot lasers [J]. Nature photonics, 2007, 1(7): 395-401. doi: 10.1038/nphoton.2007.120 |
[2]
|
Thompson M G, Rae A R, Xia M, et al. InGaAs quantum-dot mode-locked laser diodes [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15(3): 661-672. doi: 10.1109/JSTQE.2008.2012265 |
[3]
|
Kuntz M, Fiol G, Laemmlin M, et al. High-speed mode-locked quantum-dot lasers and optical amplifiers [J]. Proceedings of the IEEE, 2007, 95(9): 1767-1778. doi: 10.1109/JPROC.2007.900949 |
[4]
|
Merghem K, Teissier R, Aubin G, et al. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm [J]. Applied Physics Letters, 2015, 107(11): 111109. doi: 10.1063/1.4931364 |
[5]
|
Holc K, Weig T, Pletschen W, et al. Picosecond pulse generation in monolithic GaN-based multi-section laser diodes[C]//Gallium Nitride Materials and Devices VIII. International Society for Optics and Photonics, 2013, 8625: 862515. |
[6]
|
Kemal J N, Marin-Palomo P, Panapakkam V, et al. Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator [J]. Optics express, 2019, 27(22): 31164-31175. doi: 10.1364/OE.27.031164 |
[7]
|
Sadeev T, Arsenijević D, Franke D, et al. 1.55 μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range [J]. Applied Physics Letters, 2015, 106(3): 031114. doi: 10.1063/1.4906451 |
[8]
|
Li X, Wang H, Qiao Z, et al. High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser [J]. Applied Physics Letters, 2019, 114(22): 221104. doi: 10.1063/1.5096447 |
[9]
|
Huang X, Stintz A, Li H, et al. Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers [J]. Applied Physics Letters, 2001, 78(19): 2825-2827. doi: 10.1063/1.1371244 |
[10]
|
Sulmoni L, Lamy J M, Dorsaz J, et al. Static and dynamic properties of multi-section InGaN-based laser diodes [J]. Journal of Applied Physics, 2012, 112(10): 103112. doi: 10.1063/1.4768163 |
[11]
|
Thompson M G, Rae A, Sellin R L, et al. Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers [J]. Applied Physics Letters, 2006, 88(13): 133119. doi: 10.1063/1.2186110 |
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