Volume 49 Issue 1
Jan.  2020
Turn off MathJax
Article Contents
Article Navigation >  Infrared and Laser Engineering  > 2020  >  49(1): 0103002-0103002(6)

Liang Jing, Zhou Liangliang, Li Bin, Li Xueming, Tang Libin. Research on the preparation, structure and infrared properties of Sb2Te3 quantum dots[J]. Infrared and Laser Engineering, 2020, 49(1): 0103002-0103002(6). doi: 10.3788/IRLA202049.0103002
Citation: Liang Jing, Zhou Liangliang, Li Bin, Li Xueming, Tang Libin. Research on the preparation, structure and infrared properties of Sb2Te3 quantum dots[J]. Infrared and Laser Engineering, 2020, 49(1): 0103002-0103002(6). doi: 10.3788/IRLA202049.0103002
shu

Research on the preparation, structure and infrared properties of Sb2Te3 quantum dots

doi: 10.3788/IRLA202049.0103002

  • 1. Key Laboratory of Advanced Technique&Preparation for Renewable Energy Materials, Solar Energy Research Institute, Ministry of Education, Yunnan Normal University, Kunming 650500, China;

  • 2. Kunming Institute of Physics, Kunming 650223, China;

  • 3. Yunnan Key Laboratory of Advanced Photoelectric Materials&Devices, Kunming 650223, China

  • Received Date: 2019-11-05
  • Rev Recd Date: 2019-12-15
  • Publish Date: 2020-01-28
  • Antimony telluride (Sb2Te3) is a new type of two-dimensional layered material, in this paper, the "top-down" ultrasonic exfoliation method was used to prepare antimony telluride quantum dots (Sb2Te3 QDs) for the first time, with antimony telluride powder as raw material, and N-methyl pyrrolidone (NMP) as the dispersant. A variety of characterizations(SEM, TEM, AFM, XPS, XRD, etc.) for the structure and morphology of the prepared Sb2Te3 QDs were performed. The optical properties of Sb2Te3 QDs were studied using UV-Vis, PL and PLE. It is found that the average particle size of the prepared Sb2Te3 QDs is 2.3 nm, and the average height is 1.9 nm, with a good dispersive particle size uniformity, the PL and PLE peaks have a redshift, both PL and PLE are dependent on the excitation wavelength and emission wavelength. It is also found that Sb2Te3 QDs has obvious absorption and photoluminescence in the infrared band. The results indicate that the ultrasonic exfoliation method is feasible to prepare Sb2Te3 QDs, the characteristics of the material show the potential application in infrared detector.
  • [1] Yavorsky B Y, Hinsche N F, Mertig I, et al. Electronic structure and transport anisotropy of Bi2Te3 and Sb2Te3[J]. Physical Review B Condensed Matter, 2011, 84(16):3529-3538.
    [2] Julian Schaumann, Manuel Loor, DeryaÜnal, et al. Improving the zT value of thermoelectrics by nanostructuring:tuning the nanoparticle morphology of Sb2Te3 by using ionic liquids[J]. Dalton Transactions, 2017, 46(3):656-668.
    [3] Hu S, Tang R, Tian C, et al. The influence of thickness on the properties of Sb2Te3 thin films and its application in CdS/CdTe thin film solar cells[J]. Specialized Collections, 2011, 225-226:789-793.
    [4] Souza S M, Poffo C M, Trichês D M, et al. High pressure monoclinic phases of Sb2Te3[J]. Physica B Condensed Matter, 2012, 407(18):3781-3789.
    [5] Fang B, Zeng Z, Yan X, et al. Effects of annealing on thermoelectric properties of Sb2Te3 thin films prepared by radio frequency magnetron sputtering[J]. Journal of Materials Science:Materials in Electronics, 2013, 24(4):1105-1111.
    [6] Hinsche N F, Zastrow S, Gooth J, et al. Impact of the topological surface state on the thermoelectric transport in Sb2Te3 thin films[J]. Acs Nano, 2015, 9(4):4406-4411.
    [7] Shen H, Lee S, Kang J G, et al. Thickness dependence of the electrical and thermoelectric properties of co-evaporated Sb2Te3 films[J]. Applied Surface Science, 2017, 429:115-120.
    [8] Yang J, Zhu W, Gao X, et al. Formation and characterization of Sb2Te3 nanofilms on Pt by electrochemical atomic layer epitaxy[J]. Journal of Physical Chemistry B, 2006, 110(10):4599-4604.
    [9] Hao G, Qi X, Wang G, et al. Synthesis and characterization of few-layer Sb2Te3 nanoplates with electrostatic properties[J]. RSC Advances, 2012, 2(28):10694-10699.
    [10] Zhou J, Wang Y, Sharp J, et al. Optimal thermoelectric figure of merit in Bi2Te3/Sb2Te3 quantum dot nanocomposites[J]. Physical Review B (Condensed Matter and Materials Physics), 2012, 85(11):115320.
    [11] Peng C, Wu L, Song Z, et al. Performance improvement of Sb2Te3 phase change material by Al doping[J]. Applied Surface Science, 2011, 257(24):10667-10670.
    [12] Dong G H, Zhu Y J, Chen L D. Microwave-assisted rapid synthesis of Sb2Te3 nanosheets and thermoelectric properties of bulk samples prepared by spark plasma sintering[J]. Journal of Materials Chemistry, 2010, 20(10):1976-1981.
    [13] Schulz S, Heimann S, Friedrich J, et al. Synthesis of hexagonal Sb2Te3 nanoplates by thermal decomposition of the single-source precursor (Et2Sb)2Te[J]. Chemistry of Materials, 2012, 24(11):2228-2234.
    [14] Zheng B, Xiao Z, Chhay B, et al. Thermoelectric properties of MeV Si ion bombarded Bi2Te3/Sb2Te3 superlattice deposited by magnetron sputtering[J]. Surface & Coatings Technology, 2009, 203(17):2682-2686.
    [15] Aksela S, Patanen M, Urpelainen S, et al. Direct experimental determination of atom-molecule-solid binding energy shifts for Sb and Bi[J]. New Journal of Physics, 2010, 12(6):063003.
    [16] Asish P, Sang S E, Fan Y, et al. Broadband, self-biased photodiode based on antimony telluride (Sb2Te3) nanocrystals/silicon heterostructure[J]. Nanoscale, 2018, 10(31):15003-15009.
    [17] Khusayfan N M, Qasrawi A F, Khanfar H. Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices[J]. Materials Research Express, 2018, 5(2):026303.
    [18] Lu Xiaowei, Khatib Omar, Du Xutao, et al. Nanoimaging of electronic heterogeneity in Bi2Se3 and Sb2Te3 nanocrystals[J]. Advanced Electronic Materials, 2018, 4(1):1700377.
    [19] Lu Hua, Dai Siqing, Yue Zengji, et al. Sb2Te3 topological insulator:surface plasmon resonance and application in refractive index monitoring[J]. Nanoscale, 2019, 11(11):4759-4766.
    [20] Al-Masoodi A H H, Fauzan A, Ahmed M H M, et al. Q-switched and mode-locked ytterbium-doped fibre lasers with Sb2Te3 topological insulator saturable absorber[J]. IET Optoelectronics, 2018, 12(4):180-184.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索
Get Citation
PDF
XML

Article Metrics

Article views(1110) PDF downloads(187) Cited by()

Related
Proportional views

Research on the preparation, structure and infrared properties of Sb2Te3 quantum dots

doi: 10.3788/IRLA202049.0103002
  • 1. Key Laboratory of Advanced Technique&Preparation for Renewable Energy Materials, Solar Energy Research Institute, Ministry of Education, Yunnan Normal University, Kunming 650500, China;
  • 2. Kunming Institute of Physics, Kunming 650223, China;
  • 3. Yunnan Key Laboratory of Advanced Photoelectric Materials&Devices, Kunming 650223, China
  • Received Date: 2019-11-05
  • Rev Recd Date: 2019-12-15
  • Publish Date: 2020-01-28

Abstract: Antimony telluride (Sb2Te3) is a new type of two-dimensional layered material, in this paper, the "top-down" ultrasonic exfoliation method was used to prepare antimony telluride quantum dots (Sb2Te3 QDs) for the first time, with antimony telluride powder as raw material, and N-methyl pyrrolidone (NMP) as the dispersant. A variety of characterizations(SEM, TEM, AFM, XPS, XRD, etc.) for the structure and morphology of the prepared Sb2Te3 QDs were performed. The optical properties of Sb2Te3 QDs were studied using UV-Vis, PL and PLE. It is found that the average particle size of the prepared Sb2Te3 QDs is 2.3 nm, and the average height is 1.9 nm, with a good dispersive particle size uniformity, the PL and PLE peaks have a redshift, both PL and PLE are dependent on the excitation wavelength and emission wavelength. It is also found that Sb2Te3 QDs has obvious absorption and photoluminescence in the infrared band. The results indicate that the ultrasonic exfoliation method is feasible to prepare Sb2Te3 QDs, the characteristics of the material show the potential application in infrared detector.

    HTML

Reference (20)

Catalog

    版权所有 © 2019 《红外与激光工程》编辑部｜ Address: 58 Zhonghuan West Road, Tianjin Airport Economic Zone｜ Post Code: 300308

    津ICP备19007885号-1

    Supported by: Beijing Renhe Information Technology Co. Ltd  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return