Research progress of technologies for germanium near-infrared photodetectors

Huang Zhiwei; Wang Jianyuan; Huang Wei; Chen Songyan; Li Cheng

doi:10.3788/IRLA202049.0103004

Volume 49 Issue 1

Jan. 2020

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Huang Zhiwei, Wang Jianyuan, Huang Wei, Chen Songyan, Li Cheng. Research progress of technologies for germanium near-infrared photodetectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103004-0103004(8). doi: 10.3788/IRLA202049.0103004

Citation:

Huang Zhiwei, Wang Jianyuan, Huang Wei, Chen Songyan, Li Cheng. Research progress of technologies for germanium near-infrared photodetectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103004-0103004(8). doi: 10.3788/IRLA202049.0103004

Research progress of technologies for germanium near-infrared photodetectors

doi: 10.3788/IRLA202049.0103004

1. Tan Kah Kee College, Xiamen University, Zhangzhou 363105, China;
2. College of Physical Science and Technology, Xiamen University, Xiamen 361005, China

Received Date: 2019-10-30
Rev Recd Date: 2019-11-21
Publish Date: 2020-01-28

Abstract

Germanium (Ge) is considered as one of the most promising materials for near infrared (NIR) photodetectors, due to its large absorption coefficient at NIR wavelengths, high carrier mobilities, and process compatibility with silicon (Si) architecture. Focusing on the challenges of Ge NIR photodetectors, in this paper, the progress of Ge materials and technologies for photodetectors in our group was reviewed extensively. Firstly, the preparation process of Si-based Ge materials was introduced, in which high crystal quality Si-based Ge materials were fabricated by a two-step epitaxy method, Ge/Si wafer bonding, and Ge condensation techniques, respectively. Then the n-type doping technology of Ge was studied, in which high n-type doping concentrations and shallow junctions of Ge materials were prepared by two-step annealing (low temperature pre-annealing and excimer laser annealing) for phosphorus-implanted Ge substrate and spin-on doping of phosphorus on Ge substrate, respectively. Finally, the modulation of Schottky barrier height of metal/Ge contacts were studied, and a high-performance Ge Schottky photodetector was prepared by combining ITO transparent electrode and ultra-thin metal film interlayer.
- Ge photodetectors,
- Si-based Ge materials,
- n-type doping,
- Schottky barrier height

References

[1]	Lin Y, Lee K H, Bao S, et al. High-efficiency normal-incidence vertical pin photodetectors on a germanium-on-insulator platform[J]. Photonics Research, 2017, 5(6):702-709.
[2]	Dushaq G, Nayfeh A, Rasras M. Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD[J]. Optics Express, 2017, 25(25):32110-32119.
[3]	Luo G, Yang T H, Chang E Y, et al. Growth of high-quality Ge epitaxial layers on Si (100)[J]. Japanese Journal of Applied Physics, 2003, 42(5B):L517.
[4]	Wietler T F, Bugiel E, Hofmann K R. Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si (001) with low defect densities[J]. Applied Physics Letters, 2005, 87(18):182102.
[5]	Park J S, Bai J, Curtin M, et al. Defect reduction of selective Ge epitaxy in trenches on Si (001) substrates using aspect ratio trapping[J]. Applied Physics Letters, 2007, 90(5):052113.
[6]	Chen D, Xue Z, Wei X, et al. Ultralow temperature ramping rate of LT to HT for the growth of high quality Ge epilayer on Si (100) by RPCVD[J]. Applied Surface Science, 2014, 299:1-5
[7]	Huang Z, Mao Y, Yi X, et al. Impacts of excimer laser annealing on Ge epilayer on Si[J]. Applied Physics A, 2017, 123(2):148.
[8]	Ke S, Ye Y, Wu J, et al. Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device[J]. Journal of Materials Science, 2019, 54(3):2406-2416.
[9]	Sett S, Ghatak A, Sharma D, et al. Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide-Controlled High Optical Gain[J]. The Journal of Physical Chemistry C, 2018, 122(15):8564-8572.
[10]	Huang S, Lu W, Li C, et al. A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission[J]. Optics Express, 2013, 21(1):640-646.
[11]	Lin G, Liang D, Wang J, et al. Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature[J]. Materials Science in Semiconductor Processing, 2019, 97:56-61.
[12]	Zhang L, Hong H, Wang Y, et al. Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate[J]. Chinese Physics B, 2017(11):60.
[13]	Wang Y, Zhang L, Huang Z, et al. Crystallization of GeSn thin films deposited on Ge (100) substrate by magnetron sputtering[J]. Materials Science in Semiconductor Processing, 2018, 88:28-34.
[14]	Chen N, Lin G, Zhang L, et al. Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO₂/Si substrate[J]. Japanese Journal of Applied Physics, 2017, 56(5):050301.
[15]	Zhang L, Hong H, Li C, et al. High-Sn fraction GeSn quantum dots for Si-based light source at 1.55μm[J]. Applied Physics Express, 2019, 12(5):055504.
[16]	Wang C, Li C, Lin G, et al. Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing[J]. IEEE Transactions on Electron Devices, 2014, 61(9):3060-3065.
[17]	Wang C, Li C, Wei J, et al. High-performance Ge pn photodiode achieved with preannealing and excimer laser annealing[J]. IEEE Photonics Technology Letters, 2015, 27(14):1485-1488.
[18]	Mathiot D, Lachiq A, Slaoui A, et al. Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing[J]. Materials Science in Semiconductor Processing, 1998, 1(3-4):231-236.
[19]	Boldrini V, Carturan S, Maggioni G, et al. Optimal process parameters for phosphorus spin-on-doping of germanium[J]. Applied Surface Science, 2017, 392(1):1173-1180.
[20]	Liang D, Lin G, Huang D, et al. Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p shallow junctions through rapid thermal annealing[J]. Journal of Physics D:Applied Physics, 2019, 52(19):195101.
[21]	Wu Z, Huang W, Li C, et al. Modulation of Schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness[J]. IEEE Trans Electron Devices, 2012, 59(9):1328.
[22]	Wu H, Huang W, Lu W, et al. Ohmic contact to n-type Ge with compositional Ti nitride[J]. Applied Surface Science, 2013, 284:877-880.
[23]	Wu H, Wang C, Wei J, et al. Ohmic Contact to n-Type Ge with Compositional W Nitride[J]. IEEE Electron Device Letters, 2014, 35(12):1188-1190.
[24]	Liu H, Wang P, Qi D, et al. Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height[J]. Applied Physics Letters, 2014, 105(19):192103.
[25]	Lai S, Mao D, Ruan Y, et al. Impact of nitrogen plasma passivation on the Al/n-Ge contact[J]. Materials Science and Engineering:B, 2016, 211:178-184.
[26]	Huang Z, Li C, Lin G, et al. Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact[J]. Applied Physics Express, 2016, 9(2):021301.
[27]	Huang Z, Mao Y, Lin G, et al. Impacts of ITO interlayer thickness on metal/n-Ge contacts[J]. Materials Science and Engineering:B, 2017, 224:103-109.
[28]	Huang Z, Mao Y, Chang A, et al. Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection[J]. Applied Physics Express, 2018, 11(10):102203.

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Research progress of technologies for germanium near-infrared photodetectors

1. Tan Kah Kee College, Xiamen University, Zhangzhou 363105, China;

2. College of Physical Science and Technology, Xiamen University, Xiamen 361005, China

Received Date: 2019-10-30

Rev Recd Date: 2019-11-21

Publish Date: 2020-01-28

Key words:

Abstract: Germanium (Ge) is considered as one of the most promising materials for near infrared (NIR) photodetectors, due to its large absorption coefficient at NIR wavelengths, high carrier mobilities, and process compatibility with silicon (Si) architecture. Focusing on the challenges of Ge NIR photodetectors, in this paper, the progress of Ge materials and technologies for photodetectors in our group was reviewed extensively. Firstly, the preparation process of Si-based Ge materials was introduced, in which high crystal quality Si-based Ge materials were fabricated by a two-step epitaxy method, Ge/Si wafer bonding, and Ge condensation techniques, respectively. Then the n-type doping technology of Ge was studied, in which high n-type doping concentrations and shallow junctions of Ge materials were prepared by two-step annealing (low temperature pre-annealing and excimer laser annealing) for phosphorus-implanted Ge substrate and spin-on doping of phosphorus on Ge substrate, respectively. Finally, the modulation of Schottky barrier height of metal/Ge contacts were studied, and a high-performance Ge Schottky photodetector was prepared by combining ITO transparent electrode and ultra-thin metal film interlayer.

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Reference (28)

[1]	Lin Y, Lee K H, Bao S, et al. High-efficiency normal-incidence vertical pin photodetectors on a germanium-on-insulator platform[J]. Photonics Research, 2017, 5(6):702-709.
[2]	Dushaq G, Nayfeh A, Rasras M. Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD[J]. Optics Express, 2017, 25(25):32110-32119.
[3]	Luo G, Yang T H, Chang E Y, et al. Growth of high-quality Ge epitaxial layers on Si (100)[J]. Japanese Journal of Applied Physics, 2003, 42(5B):L517.
[4]	Wietler T F, Bugiel E, Hofmann K R. Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si (001) with low defect densities[J]. Applied Physics Letters, 2005, 87(18):182102.
[5]	Park J S, Bai J, Curtin M, et al. Defect reduction of selective Ge epitaxy in trenches on Si (001) substrates using aspect ratio trapping[J]. Applied Physics Letters, 2007, 90(5):052113.
[6]	Chen D, Xue Z, Wei X, et al. Ultralow temperature ramping rate of LT to HT for the growth of high quality Ge epilayer on Si (100) by RPCVD[J]. Applied Surface Science, 2014, 299:1-5
[7]	Huang Z, Mao Y, Yi X, et al. Impacts of excimer laser annealing on Ge epilayer on Si[J]. Applied Physics A, 2017, 123(2):148.
[8]	Ke S, Ye Y, Wu J, et al. Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device[J]. Journal of Materials Science, 2019, 54(3):2406-2416.
[9]	Sett S, Ghatak A, Sharma D, et al. Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide-Controlled High Optical Gain[J]. The Journal of Physical Chemistry C, 2018, 122(15):8564-8572.
[10]	Huang S, Lu W, Li C, et al. A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission[J]. Optics Express, 2013, 21(1):640-646.
[11]	Lin G, Liang D, Wang J, et al. Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature[J]. Materials Science in Semiconductor Processing, 2019, 97:56-61.
[12]	Zhang L, Hong H, Wang Y, et al. Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate[J]. Chinese Physics B, 2017(11):60.
[13]	Wang Y, Zhang L, Huang Z, et al. Crystallization of GeSn thin films deposited on Ge (100) substrate by magnetron sputtering[J]. Materials Science in Semiconductor Processing, 2018, 88:28-34.
[14]	Chen N, Lin G, Zhang L, et al. Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO₂/Si substrate[J]. Japanese Journal of Applied Physics, 2017, 56(5):050301.
[15]	Zhang L, Hong H, Li C, et al. High-Sn fraction GeSn quantum dots for Si-based light source at 1.55μm[J]. Applied Physics Express, 2019, 12(5):055504.
[16]	Wang C, Li C, Lin G, et al. Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing[J]. IEEE Transactions on Electron Devices, 2014, 61(9):3060-3065.
[17]	Wang C, Li C, Wei J, et al. High-performance Ge pn photodiode achieved with preannealing and excimer laser annealing[J]. IEEE Photonics Technology Letters, 2015, 27(14):1485-1488.
[18]	Mathiot D, Lachiq A, Slaoui A, et al. Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing[J]. Materials Science in Semiconductor Processing, 1998, 1(3-4):231-236.
[19]	Boldrini V, Carturan S, Maggioni G, et al. Optimal process parameters for phosphorus spin-on-doping of germanium[J]. Applied Surface Science, 2017, 392(1):1173-1180.
[20]	Liang D, Lin G, Huang D, et al. Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p shallow junctions through rapid thermal annealing[J]. Journal of Physics D:Applied Physics, 2019, 52(19):195101.
[21]	Wu Z, Huang W, Li C, et al. Modulation of Schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness[J]. IEEE Trans Electron Devices, 2012, 59(9):1328.
[22]	Wu H, Huang W, Lu W, et al. Ohmic contact to n-type Ge with compositional Ti nitride[J]. Applied Surface Science, 2013, 284:877-880.
[23]	Wu H, Wang C, Wei J, et al. Ohmic Contact to n-Type Ge with Compositional W Nitride[J]. IEEE Electron Device Letters, 2014, 35(12):1188-1190.
[24]	Liu H, Wang P, Qi D, et al. Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height[J]. Applied Physics Letters, 2014, 105(19):192103.
[25]	Lai S, Mao D, Ruan Y, et al. Impact of nitrogen plasma passivation on the Al/n-Ge contact[J]. Materials Science and Engineering:B, 2016, 211:178-184.
[26]	Huang Z, Li C, Lin G, et al. Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact[J]. Applied Physics Express, 2016, 9(2):021301.
[27]	Huang Z, Mao Y, Lin G, et al. Impacts of ITO interlayer thickness on metal/n-Ge contacts[J]. Materials Science and Engineering:B, 2017, 224:103-109.
[28]	Huang Z, Mao Y, Chang A, et al. Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection[J]. Applied Physics Express, 2018, 11(10):102203.

Research progress of technologies for germanium near-infrared photodetectors

doi: 10.3788/IRLA202049.0103004

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References

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通讯作者: 陈斌, bchen63@163.com

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