Volume 49 Issue 1
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Article Navigation >  Infrared and Laser Engineering  > 2020  >  49(1): 0103007-0103007(5)

Lv Yanqiu, Peng Zhenyu, Cao Xiancun, He Yingjie, Li Mo, Meng Chao, Zhu Xubo. 320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice[J]. Infrared and Laser Engineering, 2020, 49(1): 0103007-0103007(5). doi: 10.3788/IRLA202049.0103007
Citation: Lv Yanqiu, Peng Zhenyu, Cao Xiancun, He Yingjie, Li Mo, Meng Chao, Zhu Xubo. 320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice[J]. Infrared and Laser Engineering, 2020, 49(1): 0103007-0103007(5). doi: 10.3788/IRLA202049.0103007
shu

320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice

doi: 10.3788/IRLA202049.0103007

  • 1. China Airborne Missile Academy, Luoyang 471099, China;

  • 2. Aviation Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471099, China;

  • 3. The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province, Luoyang 471099, China

  • Received Date: 2019-10-20
  • Rev Recd Date: 2019-11-21
  • Publish Date: 2020-01-28
  • New infrared devices prepared by InAs/GaSb superlattice materials have developed rapidly in the last decade. The paper carries out practical researches on mid-/short-wavelength dual-color infrared detector based on type-II InAs/GaSb superlattice. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy. Finally, 320×256 focal plane arrays with excellent performance was fabricated and measured. The RA value of middle-wave channel reached 26 kΩ·cm2 and the short-wave channel reached 562 kΩ·cm2 at 77 K. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibits a detectivity value of 3.12×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibits a detectivity value of 1.34×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.
  • [1] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6):2545-0.
    [2] Hoang A M, Chen G, Haddadi A, et al. Demonstration of high performance bias-selectable dual-band short-/midwavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices[J]. Appl Phys Lett, 2013, 102:011108.
    [3] Linda Höglund, Rickard Marcks von Würtemberg, Hithesh Gatty, et al. Type-II InAs/GaSb superlattices for dual color infrared detection[C]//SPIE, 2017, 10111:1011116.
    [4] Aifer E H, Tischler J G, Warner J H, et al. Dual band LWIR/VLWIR type-II superlattice photodiodes[C]//Proc. of SPIE, 2005, 5783:112-122.
    [5] Yaoyao Sun, Guowei Wang, Xi Han, et al. 320×256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice[J]. Superlattices and Microstructures, 2017, 111:783-788.
    [6] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices:a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8):2802-2807.
    [7] Razeghi M, Hoang A M, Chen G, et al. High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb type-II superlattices[C]//Proc of SPIE, 2013, 8704:87041W.
    [8] Sun Yaoyao, Han Xi, Hao Hongyue, et al. 320×256 Short-Mid-Wavelengh dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82:140-143.
    [9] Hong B H, Rybchenko S I, Itskevich I E, et al. Applicability of the kp method to modeling of InAs/GaSb short-period superlattices[J]. Physical Review B, 2009, 79:165323.
    [10] Martin Walther1a, Robert Rehma, Joachim Fleiβner, et al. InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays[C]//Proc of SPIE, 2007, 6542:654206.
    [11] Hao Hongyue, Wei Xiang, Wang Guowei, et al. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array[J]. Chinese Phys B, 2017, 26(4):047303.
    [12] Jiang Dongwei, Wei Xiang, Guo Fengyun, et al. Low crosstalk three-color infrared detector by controlling the minority carriers type of InAs/GaSb superlattices for middle-long and very-long wavelength[J]. Chinese Phys Lett, 2016, 33(4):048502.
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320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice

doi: 10.3788/IRLA202049.0103007
  • 1. China Airborne Missile Academy, Luoyang 471099, China;
  • 2. Aviation Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471099, China;
  • 3. The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province, Luoyang 471099, China
  • Received Date: 2019-10-20
  • Rev Recd Date: 2019-11-21
  • Publish Date: 2020-01-28

Abstract: New infrared devices prepared by InAs/GaSb superlattice materials have developed rapidly in the last decade. The paper carries out practical researches on mid-/short-wavelength dual-color infrared detector based on type-II InAs/GaSb superlattice. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy. Finally, 320×256 focal plane arrays with excellent performance was fabricated and measured. The RA value of middle-wave channel reached 26 kΩ·cm2 and the short-wave channel reached 562 kΩ·cm2 at 77 K. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibits a detectivity value of 3.12×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibits a detectivity value of 1.34×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.

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