Chen Xiao, Li Lihua, Liang Yan, Hu Yanbo, Li Ming, Yao Libin, Zhao Changming, Zhao Peng, Li Wenxia. Progress of very high sensitivity infrared detector readout circuit[J]. Infrared and Laser Engineering, 2020, 49(1): 0103011-0103011(7). doi: 10.3788/IRLA202049.0103011
| Citation:
|
Chen Xiao, Li Lihua, Liang Yan, Hu Yanbo, Li Ming, Yao Libin, Zhao Changming, Zhao Peng, Li Wenxia. Progress of very high sensitivity infrared detector readout circuit[J]. Infrared and Laser Engineering, 2020, 49(1): 0103011-0103011(7). doi: 10.3788/IRLA202049.0103011
|
Progress of very high sensitivity infrared detector readout circuit
-
1. Kunming Institute of Physics, Kunming 650223, China;
-
2. School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Received Date: 2019-11-25
- Rev Recd Date:
2019-12-30
- Publish Date:
2020-01-28
-
Abstract
The key to realize very high sensitivity infrared detector is to obtain as much charge storage capacity as possible in the limited pixel area of readout circuit. The pixel-level ADC based on pulse frequency modulation is the main method to realize the readout circuit of very sensitive infrared detector. The principle of pixel-level pulse frequency modulation ADC was described. The progress of pixel-level digital readout circuit in MIT Lincoln Laboratory of the USA and CEA-LETI of France were introduced. As a new technology of expanding circuit density from three-dimensional space, the progress of 3D readout circuit was introduced. Finally, the development of readout circuit for very high sensitivity infrared detector in Kunming Institute of Physics was introduced. Using pixel-level ADC technology and digital domain TDI technology, the long-wave 512×8 digital TDI infrared detector assembly was developed by Kunming Institute of Physics with the peak sensitivity of 1.5 mK.
-
References
|
[1]
|
Oppenheim A V, Schafer R W. Digital Signal Processing[M]. New Jersy:Prentice Hall, 1975. |
|
[2]
|
Brown M G, Baker J, Colonero C, et al. Digital-pixel focal plane array development. SPIE[C]//Proc of SPIE Solid-State Circuits Conference, 2010, 608:7608-76082H. |
|
[3]
|
Schultz Kenneth I, Kelly Michael W, Baker Justin J, et al. Digital-pixel focal plane array technology[J]. Lincoln Laboratory Journal, 2014, 20:36-51. |
|
[4]
|
Peizerat A, Rostaing Jean P, Zitouni N, et al. An 88 dB SNR, 30μm pixel pitch infrared image sensor with a 2-step 16 bit A/D conversion[C]//IEEE Symposium on VLSI Circuits Digest of Technical Papers, 2012:DOI: 10.1109/VLSIC.2012.6243823. |
|
[5]
|
Dorota S Temple, Erik P Vick, Matthew R Lueck, et al. Enabling more capability within smaller pixels:advanced wafer-level process technologies for integration of focal plane arrays with readout electronics.[C]//Proc of SPIE in Image Sensing Technologies:Materials, Devices, Systems, and Applications, 2014:DOI: 10.1117/12.2054106. |
|
[6]
|
Temple1 D S, Vick1 E P, Malta1 D, et al. Advances in three-dimensional integration technologies in support of infrared focal plane arrays[C]//Proc of SPIE in Quantum Sensing and Nanophotonic Devices XII, 2015, 9370:93701L |
|
[7]
|
Masahide Goto, Kei Hagiwara, Yoshinori Iguchi, et al. Pixel-parallel 3-D integrated CMOS image sensors with pulse frequency modulation A/D converters developed by direct bonding of SOI layers[J]. IEEE Transaction on Electron Devices, 2015, 62:3530-3535. |
-
-
Proportional views
-
DownLoad: