Qiao Kai, Wang Shengkai, Cheng Hongchang, Jin Chuan, Zhang Taimin, Yang Xiaojun, Ren Bin. Experimental study on the electron sensitivity of BCMOS sensor influenced by surface passivation film[J]. Infrared and Laser Engineering, 2020, 49(4): 0418002-0418002-6. doi: 10.3788/IRLA202049.0418002
Citation:
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Qiao Kai, Wang Shengkai, Cheng Hongchang, Jin Chuan, Zhang Taimin, Yang Xiaojun, Ren Bin. Experimental study on the electron sensitivity of BCMOS sensor influenced by surface passivation film[J]. Infrared and Laser Engineering, 2020, 49(4): 0418002-0418002-6. doi: 10.3788/IRLA202049.0418002
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Experimental study on the electron sensitivity of BCMOS sensor influenced by surface passivation film
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Qiao Kai1,2
,
,
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Wang Shengkai1,2
,
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Cheng Hongchang1,2
,
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Jin Chuan1,2
,
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Zhang Taimin1,2
,
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Yang Xiaojun1,2
,
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Ren Bin1,2
- 1.
Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China
- 2.
Kunming Institute of Physics, Kunming 650223, China
- Received Date: 2019-12-20
- Rev Recd Date:
2020-01-15
- Publish Date:
2020-04-24
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Abstract
Based on the principle of silicon surface film passivation, the effect of different thickness surface passivation film on the electronic sensitivity of back-thinned CMOS (BCMOS) sensor was studied. Firstly, the electron bombardment test was carried out after the back thinning processing on CMOS sensor. The electron bombardment test shows that the gray value of the electronic image presents a linear relationship with the change of bombarding electron energy. Then, the aluminum oxide films with different thickness were deposited on the surface of back-thinned CMOS, and the electron bombardment test was carried out. It was found that the collection efficiency of secondary electron was increased by 14.9% when the thickness of aluminum oxide film was 20 nm, meaning that the electron sensitivity could be improved by surface film passivation. Furthermore, the dark current of the back-thinned CMOS sensor reduced from 1510 e-/s·pix−1 to 678 e-/s·pix−1 with the increase of film thickness. The above results show that aluminum oxide film has a good passivation effect on back-thinned CMOS sensor, which could improve the secondary electron collection efficiency and reduce the dark current of the back-thinned CMOS sensor, and provide a technical support for the development of high sensitivity EBCMOS devices in the future.
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References
[1]
|
Zhang Jingxian, Li Yudan, Jin Weiqi. Imaging Techneque of LLL and Laser[M]. Beijing: Beijing University of Science and Technology Press, 1995. (in Chinese) |
[2]
|
Jin Weiqi, Tao Yu, Shi Feng, et al. Progress of low light video technology [J]. Infrared and Laser Engineering, 2015, 44(11): 3167−3176. (in Chinese) |
[3]
|
Barbier R, Baudot J, Chabant E, et al. Performance study of a megapixel single photon position sensitive photodetector EBCMOS [J]. Nuclear Instruments and Methods in Physics Research A, 2009, 640(1): 54−56. |
[4]
|
Liu Hulin, Wang Xing, Tian Jinshou, et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection [J]. Acta Physica Sinica, 2018, 67(1): 014209. (in Chinese) |
[5]
|
Barbier R, Cajgfinger T, Calabria P, et al. A single-photon sensitive ebCMOS camera: the LUSIPHER prototype [J]. Nuclear Instruments and Methods in Physics Research A, 2011, 648(1): 266−274. doi: 10.1016/j.nima.2011.04.018 |
[6]
|
Dominjon A, Ageron M, Barbier R, et al. A ebCMOS camera system for marine bioluminescence observation: the luSEApher prototype [J]. Nuclear Instruments and Methods in Physics Research A, 2012, 695(1): 172−178. |
[7]
|
Cajgfinger T, Barbier R, Dominjon A. Single photon detection and localization accuracy with an ebCMOS camera [J]. Nuclear Instruments and Methods in Physics Research A, 2015, 787(1): 176−181. |
[8]
|
Song De, Shi Feng, Li Ye. Simulation of charge collection efficiency for EBAPS with uniformly doped substrate [J]. Infrared and Laser Engineering, 2016, 45(2): 0203002. (in Chinese) doi: 10.3788/irla201645.0203002 |
[9]
|
Zhang Xiang, Liu Bangwu, Xia Yang, et al. The passivation of Al2O3 and its applications in the crystalline silicon solar cell [J]. Acta Physica Sinica, 2012, 61(18): 187303. (in Chinese) |
[10]
|
Yang Chengcai, Ju Guohao, Chen Yongping. Study on the photo response of a CMOS sensor integrated with PIN photodiodes [J]. Chinese Optics, 2019, 12(5): 1076−1089. doi: 10.3788/co.20191205.1076 |
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