GaN-based avalanche photodiodes and its recent development

Liu Fuhao; Xu Jintong; Wang Ling; Wang Rongyang; Li Xiangyang

Volume 43 Issue 4

May 2014

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Article Navigation > Infrared and Laser Engineering > 2014 > 43(4): 1215-1221

Liu Fuhao, Xu Jintong, Wang Ling, Wang Rongyang, Li Xiangyang. GaN-based avalanche photodiodes and its recent development[J]. Infrared and Laser Engineering, 2014, 43(4): 1215-1221.

Citation:

Liu Fuhao, Xu Jintong, Wang Ling, Wang Rongyang, Li Xiangyang. GaN-based avalanche photodiodes and its recent development[J]. Infrared and Laser Engineering, 2014, 43(4): 1215-1221.

GaN-based avalanche photodiodes and its recent development

1.
State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
2.
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;
3.
University of Chinese Academy of Sciences,Beijing 100049,China

Received Date: 2013-08-10
Rev Recd Date: 2013-09-25
Publish Date: 2014-04-25

Abstract

The investigation of GaN-based avalanche photodiodes(APDs) was motivated by the demand of high sensitivity ultraviolet detectors in numerous civilian and military applications. APDs operate under high reverse bias voltage, and carriers in the device caused impact ionization under high electric fields, as a result, the avalanche multiplication could be obtained. In this paper, reviews were made on the development of GaN-based avalanche photodiodes, the largest value of gain in this work was nearly 3105. Relationship between width of the intrinsic layer and dark current has been studied. The measuring system based on phase sensitive detecting technique has been shown. Relationships between modulating frequencies and noise has also been investigated. It was found that in the range of low frequency(30-2 kHz), the excess noise behaved as 1/f noise. In the end, the recent developments and applications of the Geiger mode operations of GaN-based APDs are introduced.
- avalanche photodiodes,
- gain,
- dark current,
- noise,
- Geiger mode

References

[1]	Li Xiangyang, Xu Jintong, Tang Yingwen, et al. GaN based ultraviolet detectors and its recent development [J]. Infrared and Laser Engineering, 2006, 35(3): 276-280. (in Chinese) 李向阳, 许金通, 汤英文, 等. GaN 基紫外探测器及其研究进展[J]. 红外与激光工程, 2006, 35(3): 276-280.
[2]
[3]
[4]	Chen Liang, Zhang Yan, Chen Jun, et al. Fabrication and characterization of back-illuminated GaN/AlGaN p-i-n UV detectors with high performance [J]. Infrared and Laser Engineering, 2007, 36(6): 928-931. (in Chinese) 陈亮, 张燕, 陈俊, 等. 高性能背照射GaN/AlGaN p-i-n 紫外探测器的制备与性能[J]. 红外与激光工程, 2007, 36(6): 928-931.
[5]	Zhang Yan, Wang Nili, Sun Jinglan, et al. New AlGaN/PZT ultraviolet/infrared dual-band detector[J]. Infrared and Laser Engineering, 2009, 38(2): 210-212. (in Chinese) 张燕, 王妮丽, 孙璟兰, 等. 新型的AlGaN/PZT 材料紫外/ 红外双波段探测器[J]. 红外与激光工程, 2009, 38 (2): 210-212.
[6]
[7]	Mcclintock R, Pau J L, Minder K, et al. III-Nitride avalanche photodiodes [C]//SPIE, 2009, 7222: 72220U1-72220U12.
[8]
[9]	Mcclintock R, Pau J L, Minder K, et al. III-Nitride photon counting avalanche photodiodes [C]//SPIE, 2008, 6900: 69000N1-11.
[10]
[11]	Osinsky A,Shur M S, Gask R, et al.Avalanche breakdown and breakdown luminescence in p--n GaN diodes [J]. Electronics Letters, 1998, 34(7): 691-692.
[12]
[13]	Mcinmtosh K A, Molnar R J, M ahoneyl L J, et al. GaN avalanche photodiodes grown by hydride vapor-phase epitaxy[J]. Applied Physics Letters, 1999, 75(22): 3485-3487.
[14]
[15]
[16]	Carrano J C, Lambert D J H, Eiting C J, et al. GaN avalanche photodiodes[J]. Applied Physics Letters, 2000, 76 (7): 924-926.
[17]	Yang B, Li T, Heng K, et al. Low dark current GaN avalanche photodiodes [J]. Quantum Electronics Letters, 2000, 36(12): 1389-1391.
[18]
[19]	Mcclintock R, Yasan A, Minder K, et al. Avalanche multiplication in AlGaN based solar-blind photodetectors [J]. Applied Physics Letters, 2005, 87(24): 241123_1-241123-3.
[20]
[21]
[22]	Tut T, Butun S, Butun B, et al. Solar-blind AlxGa1-xNbased avalanche photodiodes [J]. Applied Physics Letters, 2005, 87(22): 223502_1-223502_3.
[23]	Mcclintock R, Pau J L, Minder K, et al. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes [J]. Applied Physics Letters, 2007, 90 (14): 141112_1-141112_3.
[24]
[25]	Pau J L, Bayram C, Mcclintock R, et al.Back-illuminated separate absorption and multiplication GaN avalanche Photodiodes [J]. Applied Physics Letters, 2008, 92 (10): 101120_1-101120_3.
[26]
[27]
[28]	Limb J B, Yoo D, Ryou J H, et al. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition [J]. Applied Physics Letters, 2006, 89 (1): 011112_1-011112_3.
[29]	Vashaei Z, Cicek E, Bayram C, et al. GaN avalanche photodiodes grown on m-plane freestanding GaN substrate[J]. Applied Physics Letters, 2010, 96(20): 201908_1-201908_3.
[30]
[31]
[32]	Xu Jintong, Chen Jun, Chen Jie, et al. Fabrication and device characteristics of GaN-based avalanche photodiodes[J]. Laser Infrared, 2007, 37 (S1): 954-956, 960. (in Chinese)
[33]	Wang L, Bao X C, Zhang W J, et al. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes [J]. Semiconductor Science and Technology, 2009, 24 (2009): 0095006_1-6.
[34]
[35]
[36]	Liu W B, Zhao D G, Sun X, et al. Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area [J]. Semiconductor Science and Technology, 2009, 42: 015108_1-5.
[37]
[38]	Sun L, Chen J L, Li J F, et al. AlGaN solar-blind avalanche photodiodes with high multiplication gain [J]. Applied Physics Letters, 2010, 97(19): 191103_1-191103-3.
[39]
[40]	Wang Xiaodong, Hu Weida, Chen Xiaoshuang, et al. Electro-optical characteristics of separate absorption and multiplication GaN avalanche photodiode[C]//NUSOD,2011, 11: 39-40.
[41]
[42]	Bertazzi F, Moresco M, Bellotti E. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band monte carlo model [J]. Journal of Applied Physics, 2009, 106(6): 063718_1-063718_12.
[43]	Oguzman I H, Bellotti E, Brennan K F, et al. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN[J]. Journal of Applied Physics, 1997, 81(12): 7827-7834.
[44]
[45]
[46]	Guo X Y. High performance ultraviolet 4H-SiC avalanche photodiodes[D]. USA:Thesis University of Texas, 2005.
[47]	Forrest S R, Didomenico M, Smith R G, et al. Evidence for tunneling in reverse-biased III-V photodetector diodes[J]. Applied Physics Letters, 1980, 36(7): 580-582.
[48]
[49]
[50]	Reklaitis A, Regglani L. Monte Carlo investigation of current voltage and avalanche noise in GaN double-driftimpact diodes [J]. Journal of Applied Physics, 2005, 97 (4): 043709_1-043709_8.
[51]
[52]	Mcintyre R J. Multiplication noise in uniform avalanche diodes [J]. IEEE Transactions of Electron Devices, 1966, 13(1): 164-168.
[53]	Pau J L, Mcclintock R, Minder K, et al. Geiger-mode operation of back-illuminated GaN avalanche photodiodes[J], Applied Physics Letters, 2007, 91(4): 041104--1-041104_3.
[54]
[55]
[56]	Mcintosh K A, Molnar R J, Mahoney L J, et al. Ultraviolet photon counting with GaN avalanche photodiodes[J]. Applied Physics Letters, 2000, 76(26): 3938-3940.
[57]	Cicek E, Vashaei Z, Mcclintock R, et al. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates [J]. Applied Physics Letters, 2010, 96(26): 261107_1-261107_1.

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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GaN-based avalanche photodiodes and its recent development

1. State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;

2. Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;

3. University of Chinese Academy of Sciences,Beijing 100049,China

Received Date: 2013-08-10

Rev Recd Date: 2013-09-25

Publish Date: 2014-04-25

Key words:

Abstract: The investigation of GaN-based avalanche photodiodes(APDs) was motivated by the demand of high sensitivity ultraviolet detectors in numerous civilian and military applications. APDs operate under high reverse bias voltage, and carriers in the device caused impact ionization under high electric fields, as a result, the avalanche multiplication could be obtained. In this paper, reviews were made on the development of GaN-based avalanche photodiodes, the largest value of gain in this work was nearly 3105. Relationship between width of the intrinsic layer and dark current has been studied. The measuring system based on phase sensitive detecting technique has been shown. Relationships between modulating frequencies and noise has also been investigated. It was found that in the range of low frequency(30-2 kHz), the excess noise behaved as 1/f noise. In the end, the recent developments and applications of the Geiger mode operations of GaN-based APDs are introduced.

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Reference (57)

[1]	Li Xiangyang, Xu Jintong, Tang Yingwen, et al. GaN based ultraviolet detectors and its recent development [J]. Infrared and Laser Engineering, 2006, 35(3): 276-280. (in Chinese) 李向阳, 许金通, 汤英文, 等. GaN 基紫外探测器及其研究进展[J]. 红外与激光工程, 2006, 35(3): 276-280.
[2]
[3]
[4]	Chen Liang, Zhang Yan, Chen Jun, et al. Fabrication and characterization of back-illuminated GaN/AlGaN p-i-n UV detectors with high performance [J]. Infrared and Laser Engineering, 2007, 36(6): 928-931. (in Chinese) 陈亮, 张燕, 陈俊, 等. 高性能背照射GaN/AlGaN p-i-n 紫外探测器的制备与性能[J]. 红外与激光工程, 2007, 36(6): 928-931.
[5]	Zhang Yan, Wang Nili, Sun Jinglan, et al. New AlGaN/PZT ultraviolet/infrared dual-band detector[J]. Infrared and Laser Engineering, 2009, 38(2): 210-212. (in Chinese) 张燕, 王妮丽, 孙璟兰, 等. 新型的AlGaN/PZT 材料紫外/ 红外双波段探测器[J]. 红外与激光工程, 2009, 38 (2): 210-212.
[6]
[7]	Mcclintock R, Pau J L, Minder K, et al. III-Nitride avalanche photodiodes [C]//SPIE, 2009, 7222: 72220U1-72220U12.
[8]
[9]	Mcclintock R, Pau J L, Minder K, et al. III-Nitride photon counting avalanche photodiodes [C]//SPIE, 2008, 6900: 69000N1-11.
[10]
[11]	Osinsky A,Shur M S, Gask R, et al.Avalanche breakdown and breakdown luminescence in p--n GaN diodes [J]. Electronics Letters, 1998, 34(7): 691-692.
[12]
[13]	Mcinmtosh K A, Molnar R J, M ahoneyl L J, et al. GaN avalanche photodiodes grown by hydride vapor-phase epitaxy[J]. Applied Physics Letters, 1999, 75(22): 3485-3487.
[14]
[15]
[16]	Carrano J C, Lambert D J H, Eiting C J, et al. GaN avalanche photodiodes[J]. Applied Physics Letters, 2000, 76 (7): 924-926.
[17]	Yang B, Li T, Heng K, et al. Low dark current GaN avalanche photodiodes [J]. Quantum Electronics Letters, 2000, 36(12): 1389-1391.
[18]
[19]	Mcclintock R, Yasan A, Minder K, et al. Avalanche multiplication in AlGaN based solar-blind photodetectors [J]. Applied Physics Letters, 2005, 87(24): 241123_1-241123-3.
[20]
[21]
[22]	Tut T, Butun S, Butun B, et al. Solar-blind AlxGa1-xNbased avalanche photodiodes [J]. Applied Physics Letters, 2005, 87(22): 223502_1-223502_3.
[23]	Mcclintock R, Pau J L, Minder K, et al. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes [J]. Applied Physics Letters, 2007, 90 (14): 141112_1-141112_3.
[24]
[25]	Pau J L, Bayram C, Mcclintock R, et al.Back-illuminated separate absorption and multiplication GaN avalanche Photodiodes [J]. Applied Physics Letters, 2008, 92 (10): 101120_1-101120_3.
[26]
[27]
[28]	Limb J B, Yoo D, Ryou J H, et al. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition [J]. Applied Physics Letters, 2006, 89 (1): 011112_1-011112_3.
[29]	Vashaei Z, Cicek E, Bayram C, et al. GaN avalanche photodiodes grown on m-plane freestanding GaN substrate[J]. Applied Physics Letters, 2010, 96(20): 201908_1-201908_3.
[30]
[31]
[32]	Xu Jintong, Chen Jun, Chen Jie, et al. Fabrication and device characteristics of GaN-based avalanche photodiodes[J]. Laser Infrared, 2007, 37 (S1): 954-956, 960. (in Chinese)
[33]	Wang L, Bao X C, Zhang W J, et al. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes [J]. Semiconductor Science and Technology, 2009, 24 (2009): 0095006_1-6.
[34]
[35]
[36]	Liu W B, Zhao D G, Sun X, et al. Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area [J]. Semiconductor Science and Technology, 2009, 42: 015108_1-5.
[37]
[38]	Sun L, Chen J L, Li J F, et al. AlGaN solar-blind avalanche photodiodes with high multiplication gain [J]. Applied Physics Letters, 2010, 97(19): 191103_1-191103-3.
[39]
[40]	Wang Xiaodong, Hu Weida, Chen Xiaoshuang, et al. Electro-optical characteristics of separate absorption and multiplication GaN avalanche photodiode[C]//NUSOD,2011, 11: 39-40.
[41]
[42]	Bertazzi F, Moresco M, Bellotti E. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band monte carlo model [J]. Journal of Applied Physics, 2009, 106(6): 063718_1-063718_12.
[43]	Oguzman I H, Bellotti E, Brennan K F, et al. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN[J]. Journal of Applied Physics, 1997, 81(12): 7827-7834.
[44]
[45]
[46]	Guo X Y. High performance ultraviolet 4H-SiC avalanche photodiodes[D]. USA:Thesis University of Texas, 2005.
[47]	Forrest S R, Didomenico M, Smith R G, et al. Evidence for tunneling in reverse-biased III-V photodetector diodes[J]. Applied Physics Letters, 1980, 36(7): 580-582.
[48]
[49]
[50]	Reklaitis A, Regglani L. Monte Carlo investigation of current voltage and avalanche noise in GaN double-driftimpact diodes [J]. Journal of Applied Physics, 2005, 97 (4): 043709_1-043709_8.
[51]
[52]	Mcintyre R J. Multiplication noise in uniform avalanche diodes [J]. IEEE Transactions of Electron Devices, 1966, 13(1): 164-168.
[53]	Pau J L, Mcclintock R, Minder K, et al. Geiger-mode operation of back-illuminated GaN avalanche photodiodes[J], Applied Physics Letters, 2007, 91(4): 041104--1-041104_3.
[54]
[55]
[56]	Mcintosh K A, Molnar R J, Mahoney L J, et al. Ultraviolet photon counting with GaN avalanche photodiodes[J]. Applied Physics Letters, 2000, 76(26): 3938-3940.
[57]	Cicek E, Vashaei Z, Mcclintock R, et al. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates [J]. Applied Physics Letters, 2010, 96(26): 261107_1-261107_1.

GaN-based avalanche photodiodes and its recent development

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