Volume 41 Issue 8
Sep.  2012
Turn off MathJax
Article Contents
Article Navigation >  Infrared and Laser Engineering  > 2012  >  41(8): 2119-2124

Zhou Yaxun, Xu Xingchen. Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier[J]. Infrared and Laser Engineering, 2012, 41(8): 2119-2124.
Citation: Zhou Yaxun, Xu Xingchen. Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier[J]. Infrared and Laser Engineering, 2012, 41(8): 2119-2124.
shu

Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier

  • 1.

    College of Information Science and Engineering,Ningbo University,Ningbo 315211,China

  • Inordertomeetthedevelopingneedsofbroadamplificationaswellasgain-flattened operationforfiberamplifier,adouble-passstructureofbismuth-basederbium-dopedfiberamplifier(Bi- EDFA)withtheincorporationofC-band(1530-1565nm)broadfiberBragggrating(FBG)inbetweenthe twocascadedsegmentsofbismuth-basederbium-dopedfiber(Bi-EDF)wasdesigned,andtheamplifying performancesofBi-EDFAwerepresentedtheoretically.Theresultsindicatethatabroadamplification andgain-flattenedspectrumcanbeachievedwiththeaidofthesimultaneouslyobtainedhighgainofthe C-bandandL-band(1570-1620nm)signalsduetotheirexperiencingadifferentlengthbi-directional transmissioninBi-EDFaftertheincorporationofFBG.Againbandwidthof90cmwithaveragegain 35.7dBandgainvariationofapproximatelyupanddown2.3dBwithinthewavelengthrangefrom1530nmto1620nm areobtainedundertheconditionsofthe1480nmbi-directionalsymmetricalpumpingwithpumppower of200mW,thefirstandsecondBi-EDFlengthof50cmand170cm,and56-channelsignalsofC+L bandwithintervalof2nmandeachpowerof-30dBmareinputtedsimultaneously.Meanwhile,thenoisefigureofBi-EDFAisimprovedevidently.Thetheoreticalstudieswillprovidepracticalsignificancefora newdesignofC+L-bandBi-EDFAwithbroadandflattenedgain.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索
Get Citation
PDF
XML

Article Metrics

Article views(929) PDF downloads(114) Cited by()

Related
Proportional views

Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier

  • 1. College of Information Science and Engineering,Ningbo University,Ningbo 315211,China

Abstract: Inordertomeetthedevelopingneedsofbroadamplificationaswellasgain-flattened operationforfiberamplifier,adouble-passstructureofbismuth-basederbium-dopedfiberamplifier(Bi- EDFA)withtheincorporationofC-band(1530-1565nm)broadfiberBragggrating(FBG)inbetweenthe twocascadedsegmentsofbismuth-basederbium-dopedfiber(Bi-EDF)wasdesigned,andtheamplifying performancesofBi-EDFAwerepresentedtheoretically.Theresultsindicatethatabroadamplification andgain-flattenedspectrumcanbeachievedwiththeaidofthesimultaneouslyobtainedhighgainofthe C-bandandL-band(1570-1620nm)signalsduetotheirexperiencingadifferentlengthbi-directional transmissioninBi-EDFaftertheincorporationofFBG.Againbandwidthof90cmwithaveragegain 35.7dBandgainvariationofapproximatelyupanddown2.3dBwithinthewavelengthrangefrom1530nmto1620nm areobtainedundertheconditionsofthe1480nmbi-directionalsymmetricalpumpingwithpumppower of200mW,thefirstandsecondBi-EDFlengthof50cmand170cm,and56-channelsignalsofC+L bandwithintervalof2nmandeachpowerof-30dBmareinputtedsimultaneously.Meanwhile,thenoisefigureofBi-EDFAisimprovedevidently.Thetheoreticalstudieswillprovidepracticalsignificancefora newdesignofC+L-bandBi-EDFAwithbroadandflattenedgain.

    HTML

Catalog

    版权所有 © 2019 《红外与激光工程》编辑部｜ Address: 58 Zhonghuan West Road, Tianjin Airport Economic Zone｜ Post Code: 300308

    津ICP备19007885号-1

    Supported by: Beijing Renhe Information Technology Co. Ltd  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return