Recent progress of extreme ultraviolet resists

Geng Yongyou; Deng Changmeng; Wu Yiqun

Extreme ultraviolet Lithography (EUVL) has been considered as the strong candidate for next generation commercial projection lithography to print sub -22 nm half-pitch (HP) features in microelectronics field. Performance and technology of resists is one of the key parts of EUVL. In order to improve the research work in China, recent progress of EUV resists reported in near years was reviewed. The history and current status of EUVL were introduced. EUVL' features and targets on resists were presented. EUV resist research portfolio and its classification were summarized. Composition, mechanism and performances for EUVL of representative resists were focused. Performance possibility and problems of the different resists were also analyzed;Routes in the future to improve EUVL performances for them were finally discussed.

1. Key Laboratory of Material Science and Technology for High Power Lasers,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China

Received Date: 2013-10-10

Rev Recd Date: 2013-11-25

Publish Date: 2014-06-25

Key words:

Abstract: Extreme ultraviolet Lithography (EUVL) has been considered as the strong candidate for next generation commercial projection lithography to print sub -22 nm half-pitch (HP) features in microelectronics field. Performance and technology of resists is one of the key parts of EUVL. In order to improve the research work in China, recent progress of EUV resists reported in near years was reviewed. The history and current status of EUVL were introduced. EUVL' features and targets on resists were presented. EUV resist research portfolio and its classification were summarized. Composition, mechanism and performances for EUVL of representative resists were focused. Performance possibility and problems of the different resists were also analyzed;Routes in the future to improve EUVL performances for them were finally discussed.

HTML

Reference (27)

[1]
[2]	Stefan Wurm. Transition to EUV lithography[C]//Proceedings of the 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2012.
[3]	Kim Hyun-Woo, Na Hai-Sub, Cho Kyoung-Yong, et al. Patterning with EUVL: the road to 22 nm node[C]//Proc of SPIE, 2010, 7636: 76360Q-1-76360Q-11.
[4]
[5]	Takahiro Kozawa, Seiichi Tagawa. Radiation chemistry in chemically amplified resists[J]. Japanese Journal of Applied Physics, 2010, 49(3): 030001-1-030001-19.
[6]
[7]
[8]	Kim Jeongsik, Lee Jae-Woo, Kim Deogbae, et al. Measurement of EUV resists performances RLS by DUV light source[C]//SPIE, 2010, 7636: 76362Y-1-76362Y-7.
[9]	Ken Maruyama, Hiroki Nakagawa, Shalini Sharma，et al. EUV resist development for 16 nm half pitch[C]//SPIE, 2012, 8325: 83250A-1-83250A-6.
[10]
[11]	Chawon Koh, Jacque Georger, Liping Ren, et al. Characterization of promising resist platforms for sub-30 nm HP manufacturability and EUV CAR extendibility study[C]//SPIE, 2010, 7636:763604-1-763604-16.
[12]
[13]
[14]	Thackeray James W, Jain Vipul, Coley Suzanne, et al. Optimization of Polymer-bound PAG (PBP) for 20nm EUV Lithography[J]. Journal of Photopolymer Science and Technology, 2011, 24(2): 179-183.
[15]	Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, et al. Development of EUV resists based on various new materials[C]//SPIE, 2010, 7639: 76390R-1-76390R-8.
[16]
[17]	Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, et al. EUV negative resist based on Thiol-Yne system[C]//SPIE, 2011, 7972: 79721E-1-79721E-8.
[18]
[19]	Jun Iwashita, Taku Hirayama, Isamu Takagi, et al. Characteristics of main chain decomposable STAR polymer for EUV resist[C]//SPIE, 2011, 7972: 79720L-1-79720L-10.
[20]
[21]	Markos Trikeriotis, Marie Krysak, Yeon Sook Chung, et al. A new inorganic EUV resist with high-etch resistance[C]//SPIE, 2012, 8322: 83220U-1-83220U-6.
[22]
[23]	Brian Cardineau, Marie Krysak, Markos Trikeriotis, et al. Tightly-bound ligands for hafnium nanoparticle EUV resists[C]//SPIE, 2012, 8322: 83220V-1-83220V-10.
[24]
[25]
[26]	Stowers Jason K, Telecky Alan, Kocsis Michael, et al. Directly patterned inorganic hardmask for EUV lithography[C]//SPIE, 2011, 7969: 796915-1-796915-11.
[27]	Deng Changmeng, Geng Yongyou, Wu Yiqun. Research development of laser lithography technology[J]. Infrared and Laser Engineering, 2012, 41(5): 1223-1231. (in Chinese) 邓常猛，耿永友，吴谊群. 激光光刻技术的研究与发展[J].红外与激光工程, 2012, 41(5): 1223-1231.

Recent progress of extreme ultraviolet resists

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Related

Proportional views