Volume 43 Issue 9
Oct.  2014
Turn off MathJax
Article Contents

Xu Qiang, Zhao Yongpeng, Li Xiaoqiang, Li Qi, Wang Qi. Influence of capillary inner radius on Xe gas discharge extreme ultraviolet source[J]. Infrared and Laser Engineering, 2014, 43(9): 2873-2877.
Citation: Xu Qiang, Zhao Yongpeng, Li Xiaoqiang, Li Qi, Wang Qi. Influence of capillary inner radius on Xe gas discharge extreme ultraviolet source[J]. Infrared and Laser Engineering, 2014, 43(9): 2873-2877.

Influence of capillary inner radius on Xe gas discharge extreme ultraviolet source

  • Received Date: 2014-01-07
  • Rev Recd Date: 2014-02-13
  • Publish Date: 2014-09-25
  • The power of the 13.5 nm (2% bandwidth) emission is one of the key parameter for the EUV source. It's important to study the temporary of the plasma in the capillary, which is useful to optimize the discharge structure and the EUV source power. In this paper, the pinch process of the plasma and the collection efficiency under different inner radiuses of the capillary were calculated theoretically. And the influence of the inner radius of the capillary on the dynamic condition of the 13.5 nm (2% bandwidth) emission was detected by a EUV monitor, which was used to analyze the influence of the inner radius of the capillary on the pinch process of the plasma. By combing the theoretical and experimental results with the design of collectors in this system, the 13.5 nm (2% bandwidth) emissions at the IF point were calculated under different inner radius of the capillary. The results show that the optimal of the power at the IF point has been got with the inner radius of the capillary 7 mm, the Xe gas pressure 7 Pa and discharge current 28 kA.
  • [1]
    [2] Ma Zhanlong, Wang Junlin. Ultra-precision optical fabricationtechnology [J]. Infrared and Laser Engineering, 2013, 42(6):1485-1490. (in Chinese)马占龙, 王君林. 超高精度光学元件加工技术[J]. 红外与激光工程, 2013, 42(6): 1485-1490.
    [3]
    [4] Deng Changmeng, Geng Yongyou, Wu Yiqun. Researchdevelopment of laser lithography technology[J]. Infrared andLaser Engineering, 2012, 41(5): 1223-1231. (in Chinese)邓常猛, 耿永友, 吴谊群. 激光光刻技术的研究与发展[J].红外与激光工程, 2012, 41(5): 1223-1231.
    [5] Song I, Iwata K, Homma Y, et al. A comparative study onthe performance of a xenon capillary Z-pinch EUVlithography light source using a pinhole camera [J]. PlasmaSources Science and Technology, 2006, 15: 322-327.
    [6]
    [7] Zhu Q S, Muto T, Yamada J, et al. Estimation of electrontemperature and density of the decay plasma in a laser-assisted discharge plasma extreme ultraviolet source by usinga modified Stark broadening method [J]. Journal of AppliedPhysics, 2011, 110: 123302.
    [8]
    [9]
    [10] Wang Liping. Optical system of extreme ultraviolet lithography[J]. Chinese Journal of Optics and Applied Optics, 2010,3(5): 452-461. (in Chinese)王丽萍. 极紫外投影光刻光学系统[J], 中国光学与应用光学, 2010, 3(5): 452-461.
    [11] Ni Mingyang, Gong Yan. Transmission ratio analysis for alateral adjustment barrel in DUV projection lens[J]. Infraredand Laser Engineering, 2012, 41(12): 3323-3330. (in Chinese)倪明阳, 巩岩. 深紫外投影物镜偏心调整机构的传动比分析[J]. 红外与激光工程, 2012, 41(12): 3323-3330.
    [12]
    [13] Kieft E, Garloff K, Van Der Mullen J, et al. Comparison ofexperimental and simulated extreme ultraviolet spectra ofxenon and tin discharges [J]. Physical Review E, 2005, 71(3):036402.
    [14]
    [15]
    [16] Lv Peng, Liu Chunfang, Zhang Chaohai, et al. Experimentalstudy on main pulse power supply for dicharge producedplasma extreme ultraviolet source[J]. High Power Laser andParticle Beams, 2010, 22(2): 388-392. (in Chinese)吕鹏, 刘春芳, 张潮海, 等. 放电等离子体极紫外光源中的主脉冲电源[J]. 强激光与粒子束, 2010, 22(2): 388-392.
    [17]
    [18] Vrba P, Vrbov M. Z-Pinch evolution in capillary discharge[J]. Contributions to Plasma Physics, 2000, 40(5-6): 581-595.
    [19] Zhao Y, Cheng Y, Luan B, et al. Effects of capillarydischarge current on the time of lasing onset of soft x-raylaser at low pressure [J]. Journal of Physics D-AppliedPhysics, 2006, 39: 342-346.
    [20]
    [21] Zhang S, Wang Q, Zhu D, et al. Optical design for EUVlithography source collector[J]. Chinese Optics Letters, 2011,9(5): 052201.
    [22]
    [23]
    [24] Colombant D, Tonon G. X-ray emission in laser-producedplasmas[J]. Journal of Applied Physics, 1973, 44(8): 3524-3537.
    [25] Klosner M, Silfvast W. Xenon-emission-spectra identificationin the 5-20-nm spectral region in highly ionized xenoncapillary-discharge plasmas[J]. J Opt Sci Am B, 2000, 17(7):1279-1290.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Article Metrics

Article views(327) PDF downloads(217) Cited by()

Related
Proportional views

Influence of capillary inner radius on Xe gas discharge extreme ultraviolet source

  • 1. National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin 150001,China

Abstract: The power of the 13.5 nm (2% bandwidth) emission is one of the key parameter for the EUV source. It's important to study the temporary of the plasma in the capillary, which is useful to optimize the discharge structure and the EUV source power. In this paper, the pinch process of the plasma and the collection efficiency under different inner radiuses of the capillary were calculated theoretically. And the influence of the inner radius of the capillary on the dynamic condition of the 13.5 nm (2% bandwidth) emission was detected by a EUV monitor, which was used to analyze the influence of the inner radius of the capillary on the pinch process of the plasma. By combing the theoretical and experimental results with the design of collectors in this system, the 13.5 nm (2% bandwidth) emissions at the IF point were calculated under different inner radius of the capillary. The results show that the optimal of the power at the IF point has been got with the inner radius of the capillary 7 mm, the Xe gas pressure 7 Pa and discharge current 28 kA.

Reference (25)

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return