Growth and Raman spectrum of Au-doped Hg1-xCdxTe epitaxial crystals

Wang Reng; Jiao Cuiling; Xu Guoqing; Lu Ye; Zhang Kefeng; Du Yunchen; Li Xiangyang; Zhang Liping; Shao Xiuhua; Lin Xingchao

Au -doped Hg1-xCdxTe crystals were grown by vapor phase epitaxial method. The optical properties of Hg1-xCdxTe crystals were investigated by using Fourier transform infrared spectroscopy and Raman spectroscopy. Moreover, the surface of Hg1-xCdxTe epitaxial materials were observed by metallographic microscopy. Based on traditional photovoltaic technique, the shot-wavelength detectors were made by Au-doped Hg1-xCdxTe film materials. Performances of the detectors were favorable. The background-limited detective was 4.67E+11/(cmHz1/2W-1).

Growth and Raman spectrum of Au-doped Hg_1-xCd_xTe epitaxial crystals

1. Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

Received Date: 2014-01-15

Rev Recd Date: 2014-02-14

Publish Date: 2014-09-25

Key words:

Abstract: Au -doped Hg1-xCdxTe crystals were grown by vapor phase epitaxial method. The optical properties of Hg1-xCdxTe crystals were investigated by using Fourier transform infrared spectroscopy and Raman spectroscopy. Moreover, the surface of Hg1-xCdxTe epitaxial materials were observed by metallographic microscopy. Based on traditional photovoltaic technique, the shot-wavelength detectors were made by Au-doped Hg1-xCdxTe film materials. Performances of the detectors were favorable. The background-limited detective was 4.67E+11/(cmHz1/2W-1).

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Growth and Raman spectrum of Au-doped Hg_1-xCd_xTe epitaxial crystals

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