Ji Yingjun, Shi Zhu, Qin Wenzhi, Dai Qian, Feng Wanpeng, Hu Junjie. Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting[J]. Infrared and Laser Engineering, 2015, 44(3): 934-940.
| Citation:
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Ji Yingjun, Shi Zhu, Qin Wenzhi, Dai Qian, Feng Wanpeng, Hu Junjie. Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting[J]. Infrared and Laser Engineering, 2015, 44(3): 934-940.
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Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting
- Received Date: 2014-07-10
- Rev Recd Date:
2014-08-15
- Publish Date:
2015-03-25
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Abstract
The tunneling breakdown electric field, avalanche breakdown electric field, multiplication region width depend on exceed breakdown voltage of InGaAs/InP SPAD was researched as a key point. The calculated method of exceed breakdown voltage was presented. The basic performance of single photon avalanche diode(SPAD) depends on their excess bias, multiplication region width, working temperature, electric-field distribution and quantum efficiency has been analyzed. According to these analysis, a designed solution of InGaAs/InP SPAD has been presented, and then the device was manufactured later. Under the conditions of-40℃ and exceed breakdown voltage over 2 V, the InGaAs/InP SPAD of 200m diameter exhibits dark count rates(DCR) below 20 kHz and photon detection efficiency(PDE) of 20%(1 500 nm). Under the conditions of-40 ℃ and exceed breakdown voltage over 2.5 V, the InGaAs/InP SPAD of 50m diameter exhibits dark count rates(DCR)below 2 kHz and photon detection efficiency(PDE) of 23%(1 550 nm). Finally, the experimental results were analyzed.
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