Wu A'ni, Li Chenyu, Zhou Qingli, Liu Jianfeng, Sun Huijuan, Yang Zhou, Zhang Cunlin. Influence of temperature on resonant properties in terahertz subwavelength metal structures[J]. Infrared and Laser Engineering, 2015, 44(6): 1832-1835.
| Citation:
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Wu A'ni, Li Chenyu, Zhou Qingli, Liu Jianfeng, Sun Huijuan, Yang Zhou, Zhang Cunlin. Influence of temperature on resonant properties in terahertz subwavelength metal structures[J]. Infrared and Laser Engineering, 2015, 44(6): 1832-1835.
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Influence of temperature on resonant properties in terahertz subwavelength metal structures
- 1.
Beijing Key Laboratory for Terahertz Spectroscopy and Imaging,Key Laboratory for Terahertz Optoelectronics,Ministry of Education,Department of Physics,Capital Normal University,Beijing 100048,China;
- 2.
Department of Basic Course,Beijing Union University,Beijing 100101,China;
- 3.
School of Optoelectronics,Beijing Institute of Technology,Beijing 100081,China
- Received Date: 2014-10-11
- Rev Recd Date:
2014-11-20
- Publish Date:
2015-06-25
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Abstract
By using terahertz time domain spectroscopy(THz-TDS), the transmission and resonance properties of terahertz subwavelength metal structures at different temperatures were studied. The transmission of U- and E-shaped structures decreased gradually with temperature increasing from 80 K to 380 K. Meanwhile, the low resonance frequency showed a slight red-shift. Through the study of temperature-dependent transmission spectra at resonance and non-resonance regions, the phenomenon of transmission decreasing was attributed to the increasing of carrier concentration in GaAs substrate. The weakened resonant strength originated from the resonate quench by temperature-generated carriers in substrate. The red-shift was due to the increase of refractive index. The investigation could provide some meaningful guides in pratical application of terahertz functional devices.
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