Sun Xufei, Yue Yang, Du Jinglei, Zhang Zhiyou. Design and analysis of surface plasmon lithography direct-writing head for high exposure depth[J]. Infrared and Laser Engineering, 2013, 42(12): 3254-3258.
| Citation:
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Sun Xufei, Yue Yang, Du Jinglei, Zhang Zhiyou. Design and analysis of surface plasmon lithography direct-writing head for high exposure depth[J]. Infrared and Laser Engineering, 2013, 42(12): 3254-3258.
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Design and analysis of surface plasmon lithography direct-writing head for high exposure depth
- 1.
School of Physical Science and Technology,Sichuan University,Chengdu 610064,China;
- 2.
School of Physics,Peking University,Beijing 100871,China
- Received Date: 2013-03-06
- Rev Recd Date:
2013-04-08
- Publish Date:
2013-12-25
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Abstract
A new direct writing device was designed. It consisted of a V-shaped hole made by Ag, the matching fluid and the organic layer for high exposure depth. 200 nm light spots were obtained by V-shaped hole which focued the incident light beams. Direct-writing head moved onto the photoresist through the matching fluid, and the matching fluid combined with the quartz substrate constructed a surface plasmon polariton(SPP) coupling cavity, which amplified the intensity of the light field in it by SPP effect and resonance. The transmission depth of the standing wave formed by forward and reflected light reached hundreds of nanometers. Simulation results show that using the new direct-write head can achieve deep exposure depth in the resist by F-P effect and SPP effect(multiple excitations). When the distance between the direct-write head and resist is greater than 90 nm, it can not only avoid the relative wear between the direct-write head and resist, but also help reduce the requirement of the mechanical movement process. Therefore it has high application potential in fabrication of nano-mask and nanophotonic structures.
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