Zhao Gongyuan, Zhao Yiqiang. Bandgap voltage reference for IRFPA readout integrated circuit[J]. Infrared and Laser Engineering, 2015, 44(9): 2627-2632.
Citation: Zhao Gongyuan, Zhao Yiqiang. Bandgap voltage reference for IRFPA readout integrated circuit[J]. Infrared and Laser Engineering, 2015, 44(9): 2627-2632.

Bandgap voltage reference for IRFPA readout integrated circuit

  • A novel high precision, low power and area economic current mode complementary metal-oxide-semiconductor(CMOS) bandgap voltage reference used in uncooled infrared focal plane array (IRFPA) systems was presented in this work. The proposed BGR contained two type of resistors with the opposite temperature coefficients(TCs), which could compensate the BGR's high order curvature error and obtain better TC. This paper illustrated a cascaded structure without a traditional op-amp, achieving low power consumption as well as excellent power supply reject ratio(PSRR). This circuit was implemented in a standard 0.18 m CMOS process. The simulation results have confirmed that the proposed BGR operates with a supply voltage of 3.3 V, consuming 6.3 A at room temperature, and the output voltage reference temperature coefficient is about 3.7 ppm/℃ from -40 ℃ to 120 ℃. The BGR can achieve a PSRR about -78 dB@ 1 kHz, consuming only 230 m100 m chip area. This proposed BGR is a low-power and area economic design.
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