Solution-processed all-organic P3HT-based photodetector

Zhang Li; Yang Dan; Wang Haowei; Wang Yishan; Yang Shengyi

The noise signals can be compressed and the optoelectronic signals can be amplified by the applied gate voltages in field-effect transistor(FET)-based photodetector. Organic materials have been widely applied in phototransistors, it is meaningful to fabricate all-organic photodetectors for large area, low cost and flexible device applications. However, multiple polymer layers are usually fabricated through solution processing and the 'solution corrosion' should be avoided during its fabrication process. Therefore, top-gate-bottom-contact(TGBC) FET configuration and orthogonal solvent were adopted in the experiments, and the bulty acetate was used as the solvent of poly(methyl methacrylate)(PMMA) to prevent destroying the poly(3-hexylthiophene)(P3HT) active layer. In this way, the FET-based all-organic photodetectors Au(Source, Drain)/P3HT(150 nm)/PMMA(800 nm)/Al(Gate) had been successfully prepared, showing an on-off current ratio of 103 and a maximum mobility of 810-3 cm2V-1s-1. The photocurrent shown an obvious increment under illumination of a broad range of incident wavelengths from 350 nm to 650 nm, giving a maximum photo-to-dark current ratio of 75 under 0.1 mW/cm2 illumination. The largest photoresponsivity of ~0.28 A/W was obtained under the illumination of 600 nm, and the trend of photoresponsivity corresponds to that of the absorption of P3HT film.

1. Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems,School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China;

2. Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems,School of Physics,Beijing Institute of Technology,Beijing 100081,China

Received Date: 2015-09-10

Rev Recd Date: 2015-09-28

Publish Date: 2015-10-25

Key words:

Abstract: The noise signals can be compressed and the optoelectronic signals can be amplified by the applied gate voltages in field-effect transistor(FET)-based photodetector. Organic materials have been widely applied in phototransistors, it is meaningful to fabricate all-organic photodetectors for large area, low cost and flexible device applications. However, multiple polymer layers are usually fabricated through solution processing and the 'solution corrosion' should be avoided during its fabrication process. Therefore, top-gate-bottom-contact(TGBC) FET configuration and orthogonal solvent were adopted in the experiments, and the bulty acetate was used as the solvent of poly(methyl methacrylate)(PMMA) to prevent destroying the poly(3-hexylthiophene)(P3HT) active layer. In this way, the FET-based all-organic photodetectors Au(Source, Drain)/P3HT(150 nm)/PMMA(800 nm)/Al(Gate) had been successfully prepared, showing an on-off current ratio of 103 and a maximum mobility of 810-3 cm2V-1s-1. The photocurrent shown an obvious increment under illumination of a broad range of incident wavelengths from 350 nm to 650 nm, giving a maximum photo-to-dark current ratio of 75 under 0.1 mW/cm2 illumination. The largest photoresponsivity of ~0.28 A/W was obtained under the illumination of 600 nm, and the trend of photoresponsivity corresponds to that of the absorption of P3HT film.

HTML

Reference (37)

[1]	Yang Shengyi, Chen Xiaochuan, Yin Dongdong, et al. The-state-of-the-art of PhotOFETs[J]. Semiconductor Optoelectronics, 2008, 29(6):803-808.(in Chinese) 杨盛谊,陈小川,尹东东,等.有机光敏效应晶体管的研究进展[J]. 半导体光电, 2008, 29(6):803-808.
[2]
[3]	Noh Y Y, Kim D Y, Yase K. Highly sensitive thin-film organic phototransistors:Effect of wavelength of light source on device performance[J]. J Appl Phys, 2005, 98:074505-7.
[4]
[5]	Noh Y Y, Ghim J, Kang S J, et al. Effect of light irradiation on the characteristics of organic field-effect transistors[J]. J Appl Phys, 2006, 100:094501-6.
[6]
[7]	Saragi T P I, Pudzich R, Fuhrmann T, et al. Organic phototransistor based on intramolecular charge transfer in a bifunctional spiro compound[J]. Appl Phys Lett, 2004, 84(13):2334-2336.
[8]
[9]	Cho M Y, Kim K, Kim S J, et al. Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5-hexyl-[2,2] terthiophenyl-5-vinyl)-benzene based organic thin film transistors[J]. J Appl Phys, 2010, 108:023703-6.
[10]
[11]	Mok S M, Yan F, Chan H L W. Organic phototransistor based on poly(3-hexylthiophene)/TiO2 nanoparticle composite[J]. Appl Phys Lett, 2008, 93(2):023310-4.
[12]
[13]
[14]	Ni Ting, Zou Fan, Jiang Yurong, et al. To improve the efficiency of bulk heterojunction organic solar cells by incorporating CdSe/ZnS quantum dots[J]. Acta Phys Chim Sin, 2014, 30(3):453.(in Chinese) 倪婷,邹凡,蒋玉蓉,等.用CdSe/ZnS量子点提高体异质结有机太阳电池的效率[J]. 物理化学学报, 2014, 30(3):453.
[15]
[16]	Sirringhaus H, Brown P J, Friend R H, et al. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers[J]. Nature, 1999, 401:685-688.
[17]
[18]	Machado W S, Hummelgen I A. Low-voltage poly(3-hexylthiophene)/poly(vinyl alcohol) field-effect transistor and inverter[J]. IEEE T Electron Dev, 2012, 59:1529-1533.
[19]	Narayan K S, Kumar N. Light responsive polymer field-effect transistor[J]. Appl Phys Lett, 2001, 79(12):1891-1893.
[20]
[21]	Deen M J, Kazemeini M H. Photosensitive polymer thin-film FETs based on poly(3-octylthiophene)
[22]
[23]	Grecu S, Roggenbuck A, Opitz A, et al. Differences of interface and bulk transport properties in polymer field-effect devices[J]. Org Electron, 2006, 7(5):276-286.
[24]	[J]. IEEE, 2005, 93(7):1312-1320.
[25]
[26]	Marjanovic N, Singh Th B, Dennler G, et al. Photoresponse of organic field-effect transistors based on conjugated polymer/fullerene blends[J]. Org Electron, 2006, 7(4):188-194.
[27]
[28]	Yang S Y, Zhao N, Zhang L, et al. Field-effect transistor-based solution-processed colloidal quantum dot photodetector with broad bandwidth into near-infrared region[J]. Nanotechnology, 2012, 23(25):255203-6.
[29]
[30]	Zhang L, Yang D, Yang S Y, et al. Solution-processed P3HT-based photodetector with field-effect transistor configuration[J]. Appl Phys A, 2014, 116(3):1511-1516.
[31]
[32]	Guo Y L, Yu G, Liu Y. Functional organic field-effect transistors[J]. Adv Mater, 2010, 22:4427-4447.
[33]	Hamilton M C, Kanicki J. Organic polymer thin-film transistor photosensors[J]. IEEE J Sel Top Quantum Electron, 2004, 10(4):840-848.
[34]
[35]	Arias A C, Endicott F, Street R A. Surface-induced self-encapsulation of polymer thin-film transistors[J]. Adv Mater, 2006, 18:2900-2904.
[36]
[37]

Solution-processed all-organic P3HT-based photodetector

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Related

Proportional views