Volume 42 Issue 12
Jan.  2014
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Article Navigation >  Infrared and Laser Engineering  > 2013  >  42(12): 3358-3362

Zhao Wenbo, Zhou Xun, Li Yanjiong, Shen Zhihui, Luo Muchang. Design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency[J]. Infrared and Laser Engineering, 2013, 42(12): 3358-3362.
Citation: Zhao Wenbo, Zhou Xun, Li Yanjiong, Shen Zhihui, Luo Muchang. Design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency[J]. Infrared and Laser Engineering, 2013, 42(12): 3358-3362.
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Design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency

  • 1.

    Chongqing Optoelectronics Research Institute,Chongqing 400060,China

  • Received Date: 2013-04-04
  • Rev Recd Date: 2013-05-08
  • Publish Date: 2013-12-25
  • High quantum efficiency, high UV/VIS rejection ratio, fast response and wide spectral response are the main objects for the design of AlGaN photodetectors. To obtain suitable detector structure for UV focal plane array, combining with the characteristics of epitaxial materials grown by MOCVD, a design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency was demonstrated based on simulations and experiments. The design basis and process of the AlxGa1-xN-pin photodetectors were introduced in detail, and then the design was optimized by experiments. Moreover, the photodiodes were fabricated according to the design, and the performance of device was also presented, exhibiting high peak unbiased EQE of 57% at 270 nm, responding to the spectral range between 250 nm and 282 nm. It is indicated that an optimal design is achieved.
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    [2] Monroy E, Omnes F, Calle F. Wide-bandgap semiconductor ultraviolet photodetectors[J]. Semiconductor Science and Technology, 2003, 18(4): R33-R51.
    [3] Reine M B, Hairston A, Lamarre P. et al. Solar-blind AlGaN 256256 p-i-n detectors and focal plane arrays[C]//SPIE, 2006, 6119: 6119-1.
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    [6] Pulfrey David L, Kuek J J, Leslie M P, et al. High UV/solar rejection ratios in GaN/AlGaN/GaN P-I-N photodiodes[J]. IEEE Transactions on Electron Devices, 2001, 48(3): 486-489.
    [7] Huang Xin, Luo Muchang, Zhou Xun. Modeling and simulation of the back-illuminated AlGaN/GaN based photodetectors[J]. Infrared and Laser Engineering, 2011, 40(11): 2071-2077. (in Chinese) 黄鑫, 罗木昌, 周勋. 背照式AlGaN/GaN基光电探测器的结构设计及性能模拟[J]. 红外与激光工程, 2011, 40(11): 2071-2077.
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  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

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Design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency

  • 1. Chongqing Optoelectronics Research Institute,Chongqing 400060,China
  • Received Date: 2013-04-04
  • Rev Recd Date: 2013-05-08
  • Publish Date: 2013-12-25

Abstract: High quantum efficiency, high UV/VIS rejection ratio, fast response and wide spectral response are the main objects for the design of AlGaN photodetectors. To obtain suitable detector structure for UV focal plane array, combining with the characteristics of epitaxial materials grown by MOCVD, a design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency was demonstrated based on simulations and experiments. The design basis and process of the AlxGa1-xN-pin photodetectors were introduced in detail, and then the design was optimized by experiments. Moreover, the photodiodes were fabricated according to the design, and the performance of device was also presented, exhibiting high peak unbiased EQE of 57% at 270 nm, responding to the spectral range between 250 nm and 282 nm. It is indicated that an optimal design is achieved.

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