Wang Bo, Bai Yonglin, Xu Peng, Gou Yongsheng, Zhu Bingli, Bai Xiaohong, Liu Baiyu, Qin Junjun. Ultrafast pump-probe detection of X-ray induced transient optical reflectivity changes in GaAs[J]. Infrared and Laser Engineering, 2015, 44(10): 3130-3133.
| Citation:
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Wang Bo, Bai Yonglin, Xu Peng, Gou Yongsheng, Zhu Bingli, Bai Xiaohong, Liu Baiyu, Qin Junjun. Ultrafast pump-probe detection of X-ray induced transient optical reflectivity changes in GaAs[J]. Infrared and Laser Engineering, 2015, 44(10): 3130-3133.
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Ultrafast pump-probe detection of X-ray induced transient optical reflectivity changes in GaAs
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Wang Bo1,2,3
,
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Bai Yonglin1,2
,
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Xu Peng2
,
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Gou Yongsheng2,3
,
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Zhu Bingli2
,
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Bai Xiaohong1
,
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Liu Baiyu2
,
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Qin Junjun1
- 1.
State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi'an 710119,China;
- 2.
Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology,Xi'an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi'an 710119,China;
- 3.
University of Chinese Academy of Sciences,Beijing 100049,China
- Received Date: 2015-02-06
- Rev Recd Date:
2015-03-07
- Publish Date:
2015-10-25
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Abstract
The optical index modulation was theoretically estimated and demonstrated under short X-ray excitation in low-temperature-grown GaAs(LT_GaAs). Hot-electron thermalization time 1 ps, carrier recombination time 2 ps and the duration of the index perturbation was determined by the carrier recombination time which was of order -2 ps in LT_GaAs with a high density of recombination defects. Predictions of radiation-induced changed in the optical refractive index were in reasonably good agreement with the limited experimental data available, suggesting that LT_GaAs was a highly promising material for high speed single transient ionizing radiation detector.
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