Shi YanLi, Lv Yuzeng, Zhao Lusheng, Zhang Weifeng, Hu Rui. High performance solid-state and digitalized InxGa1-xAs low-light night vision devices[J]. Infrared and Laser Engineering, 2013, 42(12): 3367-3372.
| Citation:
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Shi YanLi, Lv Yuzeng, Zhao Lusheng, Zhang Weifeng, Hu Rui. High performance solid-state and digitalized InxGa1-xAs low-light night vision devices[J]. Infrared and Laser Engineering, 2013, 42(12): 3367-3372.
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High performance solid-state and digitalized InxGa1-xAs low-light night vision devices
- 1.
Kunming Institute of Physics,Kuming 6500232,China;
- 2.
Science and Technology on Low-light-level Night Vision Laboratory,Xi'an 710065,China;
- 3.
63961 Uint,PLA,Beijing 100012,China
- Received Date: 2013-03-10
- Rev Recd Date:
2013-04-25
- Publish Date:
2013-12-25
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Abstract
As full solid-state low-light night vision devices, InxGa1-xAs could adjust the composition x to vary the response wavelength, which can cover the main wavelength of the night sky radiation. In addition to this, the quantum efficiency of the InxGa1-xAs material is high, and the device dark current is low, so performance of the InxGa1-xAs devices is high for the night vision system, as consequence the longer detecting distance for the system. Besides, the InxGa1-xAs arrays are made from the conventional semiconductor process without sealed in the ultrahigh vacuum. CMOS ROIC is adopted to read, transport and amplify the signal, then the signal datum is easy to handle and improve for the InxGa1-xAs low-light devices comparing the vacuum devices. The above advantages made the InxGa1-xAs devices a novel low- light device. There are lots of differences concerning the working mechanism, fabrication method, as well as the performance between InxGa1-xAs devices and vacuum one. Based on the comparison results the technique feature and the important application requirement for InxGa1-xAs solid-state low-light night vision devices were analyzed.
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