Volume 44 Issue 11
Dec.  2015
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Article Navigation >  Infrared and Laser Engineering  > 2015  >  44(11): 3293-3298

Hao Lichao, Chen Honglei, Li Hui, Chen Yiqiang, Lai Canxiong, Huang Aibo, Ding Ruijun. Shared readout integrated circuit with memory-function background suppression[J]. Infrared and Laser Engineering, 2015, 44(11): 3293-3298.
Citation: Hao Lichao, Chen Honglei, Li Hui, Chen Yiqiang, Lai Canxiong, Huang Aibo, Ding Ruijun. Shared readout integrated circuit with memory-function background suppression[J]. Infrared and Laser Engineering, 2015, 44(11): 3293-3298.
shu

Shared readout integrated circuit with memory-function background suppression

  • 1.

    Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component,The Fifth Research Institute of MIIT,Guangzhou 510610,China;

  • 2.

    Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

  • Received Date: 2015-03-11
  • Rev Recd Date: 2015-04-09
  • Publish Date: 2015-11-25
  • Very long wave infrared(VLWIR) band widely used in remote atmosphere sounding applications is particularly rich in information about humidity, CO2 levels and provides additional information about cloud structure and the temperature distribution. In order to meet the requirements of VLWIR detectors at present stage, a shared readout integrated circuit with memory-function background suppression was designed for its high injection efficiency, large dynamic range, stable detector bias, long integration time and some other advantages. In this design, the share buffered direct injection(SBDI) input circuit was used to minimize pixel area limitation and to maximize the efficiency of memory-function background suppression by 22 four neighboring pixels united. The total integration capacitor could reach up to 8.8 pF that has larger capacity, extended integration time, and increased the signal-to-noise ratio (SNR) of infrared focal plane array(IRFPA). At the same time, better contrast and dynamic range were also achieved. The final chip was fabricated with HHNEC CZ6H 0.35 m 1P4M process technology. The simulation and test results show that the dynamic range is over 90 dB, the linearity is more than 99.9%, the integration time could be extended to 74 s when the ROIC operates at the temperature of 50 K.
  • [1] Patricia Pidancier, Nicolas Jamin, Bruno Fique, et al. A review of the latest developments of MCT infrared technology from visible to VLWIR for space applications at Sofradir[C]//SPIE, 2013, 8704: 87040M.
    [2] Xie Xiaohui, Liao Qingjun, Yang Yongbin, et al. Electro-optical characteristics of HgCdTe very long wavelength infrared photovoltaic detector[J]. Infrared and Laser Engineering, 2013, 42(5): 1141-1145. (in Chinese) 解晓辉, 廖清君, 杨勇斌, 等. HgCdTe 甚长波红外光伏器件的光电性能[J]. 红外与激光工程, 2013, 42(5): 1141-1145.
    [3] Wenisch J, Eich D, Hanna S, et al. Two-dimensional long-wavelength and very long-wavelength focal-plane arrays at AIM[J]. Journal of Electronic Materials, 2010, 39(7): 846-851.
    [4] Fan Jinxiang, Yang Jianyu. Development trends of infrared imaging detecting technology[J]. Infrared and Laser Engineering, 2012, 41(12): 3145-3153. (in Chinese) 范晋祥,杨建宇. 红外成像探测技术发展趋势分析[J]. 红外与激光工程, 2012, 41(12): 3145-3153.
    [5] Delaunay P Y, Nguyen Binh-Minh, Hoffman D, et al. Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs-GaSb superlattices[J]. IEEE Journal of Quantum Electronics, 2009, 45(2): 157-162.
    [6] Hao Lichao, Chen Honglei, Li Hui, et al. Improved readout circuit with BDI structure for VLWIR FPAs[J]. Infrared and Laser Engineering, 2014, 43(6): 1782-1787. (in Chinese) 郝立超, 陈洪雷, 李辉等. BDI型甚长波IRFPA读出电路研究与设计[J]. 红外与激光工程, 2014, 43(6): 1782-1787.
    [7] Guang Yang, Chao Sun, Timothy Shaw, et al. A high dynamic-range, low-noise focal plane readout for VLWIR applications implemented with current mode background subtraction[C]//SPIE, 1998, 3360: 42-51.
    [8] Jiang Junwei, Zhao Yiqiang, Meng Fanzhong, et al. High performance readout integrated circuit for IR detectors[J]. Infrared and Laser Engineering, 2009, 38(5): 787-791. (in Chinese) 姜俊伟, 赵毅强, 孟范忠, 等. 红外探测器高性能读出电路的研究[J]. 红外与激光工程, 2009, 38(5): 787-791.
    [9] Behazd Razavi. Design of Analog CMOS Integrated Circuits[M]. Translated by Chen Guican, Cheng Jun, Zhang Ruizhi et al. Xi'an: Xi'an Jiaotong University Press, 2008: 243-252. (in Chinese) Bechazd Razavi. 模拟CMOS集成电路设计[M]. 陈贵灿, 程军, 张瑞智, 等译. 西安: 西安交通大学出版社, 2008: 243-252.
    [10] Zhou Yangfan, Xie Liang, Xia Xiaojuan, et al. Design of pixel readout circuit with time-sharing background suppression[J]. Laser and Infrared, 2009, 39(11): 1219-1222. (in Chinese) 周扬帆, 谢亮, 夏晓娟, 等. 具有分时背景抑制功能的单元电路设计[J]. 激光与红外, 2009, 39(11): 1219-1222.
    [11] Phillips J D, Edwall D D, Lee D L. Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength[J]. Journal of Electronic Materials, 2002, 31(7): 664-668.
    [12] Angelo Scotty Gilmore, James Bangs, Amanda Gerrish. VLWIR HgCdTe detector current-voltage analysis[J]. Journal of Electronic Materials, 2006, 35(6): 1403-1410.
    [13] Doo Hyung, Sang Gu Kang, Hee Chul Lee. Novel current-mode background suppression for 2- D LWIR applications [J]. IEEE Transactions on Circuits and systems-II: Express Briefs, 2005, 52(9): 606-610.
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Shared readout integrated circuit with memory-function background suppression

  • 1. Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component,The Fifth Research Institute of MIIT,Guangzhou 510610,China;
  • 2. Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • Received Date: 2015-03-11
  • Rev Recd Date: 2015-04-09
  • Publish Date: 2015-11-25

Abstract: Very long wave infrared(VLWIR) band widely used in remote atmosphere sounding applications is particularly rich in information about humidity, CO2 levels and provides additional information about cloud structure and the temperature distribution. In order to meet the requirements of VLWIR detectors at present stage, a shared readout integrated circuit with memory-function background suppression was designed for its high injection efficiency, large dynamic range, stable detector bias, long integration time and some other advantages. In this design, the share buffered direct injection(SBDI) input circuit was used to minimize pixel area limitation and to maximize the efficiency of memory-function background suppression by 22 four neighboring pixels united. The total integration capacitor could reach up to 8.8 pF that has larger capacity, extended integration time, and increased the signal-to-noise ratio (SNR) of infrared focal plane array(IRFPA). At the same time, better contrast and dynamic range were also achieved. The final chip was fabricated with HHNEC CZ6H 0.35 m 1P4M process technology. The simulation and test results show that the dynamic range is over 90 dB, the linearity is more than 99.9%, the integration time could be extended to 74 s when the ROIC operates at the temperature of 50 K.

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