Volume 42 Issue 12
Jan.  2014
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Article Navigation >  Infrared and Laser Engineering  > 2013  >  42(12): 3386-3389

Fang Dan, Tang Jilong, Wei Zhipeng, Zhao Haifeng, Fang Xuan, Tian Shanshan, Chu Xueying, Wang Xioahua. Effect of Al2O3 on the optical stability of InP induced by atom layer deposition[J]. Infrared and Laser Engineering, 2013, 42(12): 3386-3389.
Citation: Fang Dan, Tang Jilong, Wei Zhipeng, Zhao Haifeng, Fang Xuan, Tian Shanshan, Chu Xueying, Wang Xioahua. Effect of Al2O3 on the optical stability of InP induced by atom layer deposition[J]. Infrared and Laser Engineering, 2013, 42(12): 3386-3389.
shu

Effect of Al2O3 on the optical stability of InP induced by atom layer deposition

  • 1.

    National Key Laboratary on High Semiconducter Laser,Changchun University of Science and Technology,Changchun 130022,China;

  • 2.

    Changchun Institute of Optics Fine Mechanies and Physics,Chinese Academy of Sciences,Changchun,130033,China

  • Received Date: 2013-03-07
  • Rev Recd Date: 2013-04-13
  • Publish Date: 2013-12-25
  • A novel surface passivation of InP, combined wet passivation to dry passivation was proposed. In this work, the density of surface state was decreased efficiently so the strong luminescence property was obtained. The stability of InP surface was confirmed, which was exposed in air some day. Photoluminescence (PL) was performed in room temperature to achieve intensity measures. The high-resolution X-ray photoelectron spectroscopy (XPS) for InP revealed that a In-S bonding was increased with the annealing treatment. The density of surface was decreased further. The surface morphology of the sample was reflected with atomic force microscopy (AFM).
  • [1] Wang Bo, Wei Zhipeng, Li Mei, et al. Improved photoluminescence from passivated InP surface by (NH4)2S treatment[C]//Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium, 2011.
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    [3] Zhao H, Shahrjerdi D, Zhu F, et al. Inversion-type InP MOSFETs with EOT of 21 using atomic layer deposited Al2O3 gate dielectric electrochem[J]. Solid-State Lett, 2008, 1: H233.
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    [8] Sandroff C J, Nottenburg R N, Bischoff J C, et al. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation[J]. Appl Phys Lett, 1987, 51: 33-35.
    [9] Han I K, Kim E K, Lee J I, et al. Stability of sulfur-treated InP surface studied by photoluminescence and X-ray photoelectron spectroscopy[J]. Appl Phys, 1997, 10: 8.
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    [12] Wang Bo, Wei Zhipeng, Li Mei, et al. Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation [J]. Chemical Physics Letters, 2013, 556: 182-187.
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    [14] Dong Y, Ding X M, Hou X Y, et al. Sulfur passivation of GaAs metal-semiconductor field-effect transistor [J]. Appl Phys Lett, 2000, 77: 23.
    [15] Chen Weide, Choy W H, So B Kl, et al. XPS and AFM studies of the InP surfaces passivated with Gas-phase and solution-phase polysulphide[J]. Vacuum Science and Technology, 1999, 19(3): 177-181. (in Chinese) 陈维德, 蔡永康, 苏景隆, 等. 气相和溶液多硫化物钝化InP表面的XPS和AFM研究[J]. 真空科学与技术学报, 1999, 19(3): 177-181.
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    [27] Sato K, Ikoma H. Internal photoemission and X-ray photoelectron spectroscopic studies of sulfur-passivated GaAs[J]. Jpn J Appl Phys, 1993, 32: 921.
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Effect of Al2O3 on the optical stability of InP induced by atom layer deposition

  • 1. National Key Laboratary on High Semiconducter Laser,Changchun University of Science and Technology,Changchun 130022,China;
  • 2. Changchun Institute of Optics Fine Mechanies and Physics,Chinese Academy of Sciences,Changchun,130033,China
  • Received Date: 2013-03-07
  • Rev Recd Date: 2013-04-13
  • Publish Date: 2013-12-25

Abstract: A novel surface passivation of InP, combined wet passivation to dry passivation was proposed. In this work, the density of surface state was decreased efficiently so the strong luminescence property was obtained. The stability of InP surface was confirmed, which was exposed in air some day. Photoluminescence (PL) was performed in room temperature to achieve intensity measures. The high-resolution X-ray photoelectron spectroscopy (XPS) for InP revealed that a In-S bonding was increased with the annealing treatment. The density of surface was decreased further. The surface morphology of the sample was reflected with atomic force microscopy (AFM).

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