Effect of broadband sources on electrical crosstalk of CMOS array

Lai Liping; Fu Bo; Zhang Rongzhu

The crosstalk between the pixel units is the key parameter for the imaging quality of CMOS array detector. The mathematical analysis model of the electrical crosstalk was established in order to explore the influence of different light sources on the electrical crosstalk of CMOS. Furthermore, the characteristics of electrical crosstalk under the illumination of monochromatic light and broadband sources were also numerically simulated. The results show that, the electrical crosstalk increases with the increase of the wavelength of monochromatic light, as well as the spectrum bandwidth and the center wavelength of broadband sources. Moreover, the impact of broadband sources on the electrical crosstalk is greater than monochromatic light when their center wavelengths are the same. The electrical crosstalk for the monochromatic light with the radiation power of 600 W and the wavelength of 1 064 nm is about 50.611 mV, and the electrical crosstalk for broadband source with the spectrum bandwidth of 400 nm is about 50.914 mV in the same radiation power and wavelength. Consequently, the electrical crosstalk of broadband source increased by about 0.303 mV compared to the monochromatic light.

1. School of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China;

2. Institute of Fluid Physics,China Academy of Engineering Physics,Mianyan 621900,China

Received Date: 2016-05-20

Rev Recd Date: 2016-06-17

Publish Date: 2017-01-25

Key words:

Abstract: The crosstalk between the pixel units is the key parameter for the imaging quality of CMOS array detector. The mathematical analysis model of the electrical crosstalk was established in order to explore the influence of different light sources on the electrical crosstalk of CMOS. Furthermore, the characteristics of electrical crosstalk under the illumination of monochromatic light and broadband sources were also numerically simulated. The results show that, the electrical crosstalk increases with the increase of the wavelength of monochromatic light, as well as the spectrum bandwidth and the center wavelength of broadband sources. Moreover, the impact of broadband sources on the electrical crosstalk is greater than monochromatic light when their center wavelengths are the same. The electrical crosstalk for the monochromatic light with the radiation power of 600 W and the wavelength of 1 064 nm is about 50.611 mV, and the electrical crosstalk for broadband source with the spectrum bandwidth of 400 nm is about 50.914 mV in the same radiation power and wavelength. Consequently, the electrical crosstalk of broadband source increased by about 0.303 mV compared to the monochromatic light.

HTML

Reference (15)

[1]	Brouk I, Nemirovsky Y. Characterization of crosstalk between CMOS photodiodes[J]. Solid-State Electrnics, 2002, 46(1):53-59.
[2]	Shcherback I, Yadid Pecht O. CMOS APS photoresponse and crosstalk optimization analysis for scalable CMOS technologies[C]//11th IEEE International Conference on Electronics, Circuits and Systems. New York:Institute of Electrical and Electronics Engineers Computer Society, 2004:153-155.
[3]	Shcherback I, Danov T, Yadid Pecht O. A comprehensive CMOS APS crosstalk study:Phooresponse model, technology, and design trends[J]. IEEE, 2004, 51(12):2033-2041.
[4]	Shcherback I, Yadid-Pecht O. Photoresponse analysis and pixel shape optimization for CMOS active pixel sensors[J]. Trans Electron Devices, 2003, 50(1):12-18.
[5]	Shcherback I, Yadid Pecht O. CMOS APS crosstalk characteri-zation via a unique submicron scanning system[J]. Trans Electron Devices, 2003, 50(9):1994-1997.
[6]	Tseng Chien Hsien, Wuu Shou Gwo. Crosstalk improvement technology applicable to 0.14m CMOS image sensor[C]//Electron Devices Meeting IEDM Technical Digest:IEEE International, 2004:997-1000.
[7]	Schacham S E, Finkman E. Recombination mechanisms in p-type HgCdTe:Freezeout and background flux effects[J]. Journal of Applied Physics, 1985, 57(6):2001-2009.
[8]	Yan Yu, Qin Chen, Long Wen. Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters[J]. Optics Express, 2015, 23(17):21994-22003.
[9]	Aull B F, Schuette D R, Young D J. A study of crosstalk in a 256256 photon counting imager Based on silicon geiger-mode avalanche photodiodes[J]. IEEE, 2014, 15(4):2123-2132.
[10]	Ning Yonghui, Guo Yongfei, Qu Lixin, et al. Radiometric calibration and pixel data real-time processing of multi-tip TDICCD[J]. Opt Precision Eng, 2015, 23(10):2952-2961. 宁永慧, 郭永飞, 曲利新, 等. 多通道时间延迟积分CCD辐射标定和像元实时处理[J]. 光学精密工程, 2015, 23(10):2952-2961.
[11]	Zhang Jianmin, Feng Guobin, Yang Pengling, et al. Thermal issues of photoconductive HgCdTe detector in mid-infrared laser parameter measurement[J]. Opt Precision Eng, 2015, 23(1):22-30. (in Chinese)张检民, 冯国斌, 杨鹏翎, 等. 碲镉汞光导探测器在中红外激光测量中的热问题[J]. 光学精密工程, 2015, 23(1):22-30.
[12]	Chen Jun, Wang Qingsong. Recent progress of infrared upconversion device based on the integration of OLED[J]. Chinese Optics, 2015, 8(1):17-27. (in Chinese)陈俊, 王青松. 基于OLED显示单元的红外上转换器件研究进展[J]. 中国光学, 2015, 8(1):17-27.
[13]	Yang Mingyu. Detecting of photoelectric peeping devices based on active laser detection[J]. Chinese Optics, 2015, 8(2):255-262. (in Chinese)杨名宇. 利用激光主动探测技术实现光电窥视设备检测[J]. 中国光学, 2015, 8(2):255-262.
[14]	Shi Yanli, Guo Qian, Li Long, et al. Visible-extended InP/InGaAs wide spectrum response infrared detectors[J]. Infrared and Laser Engineering, 2015, 44(11):3177-3180. (in Chinese)史衍丽, 郭骞, 李龙,等. 可见光拓展InP/InGaAs宽光谱红外探测器[J]. 红外与激光工程, 2015, 44(11):3177-3180.
[15]	Kang Bingxin, Cai Yi, Wang Lingxue, et al. Technologies of performance improvement for platinum silicide infrared focal plane array[J]. Infrared and Laser Engineering, 2014, 43(3):742-748. (in Chinese)康冰心, 蔡毅, 王岭雪,等. 硅化铂红外焦平面探测器性能改进技术分析[J]. 红外与激光工程, 2014, 43(3):742-748.

Effect of broadband sources on electrical crosstalk of CMOS array

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Related

Proportional views