Surface topography and optical properties of monocrystalline silicon induced by low energy different ion beam parameters

Chen Zhili; Liu Weiguo

ECR was employed to etch the surface of monocrystalline silicon(100), etching effects and optical properties of low energy Ar+ ion beams with different ion energies and fluxes under normal ion incidence were studied. The experiment results indicate that, when ion flux density was 88-310 A/cm2 with ion beam energy of 1 000 eV, self-organizing nano dot structure appeared on the sample surface, orderly arrangement of the micro-structure was along with the increase in ion flux density; RMS decreased until the flux density was near 160 A/cm2, and then increased rapidly; The average transmittance of etched sample, within the range of near-infrared bands, was improved from 53% to more than 57%, which enlarged with the increase in orderliness of self-organizing nano-structure. When ion beam energy was 500-1 000 eV with ion flux density of 270 A/cm2, the tiny nano dot structure gradually formed, which tended to be concentrated and orderly with the increase of ion beam energy. If ion energy was going up below 1 100 eV, RMS slowly increased but rapidly reduced over the number. The transmittance of etched sample was sharply improved, with the increasing orderliness of self-organizing nano-structure. Etching rate was directly proportional to the square of ion flux energy. The pattern transformation of self-organizing nano-structure results from the interaction of spurting roughening and relaxation mechanism.

1. Institute of Microelectronics,Xidian University,Xi'an 710064,China

Received Date: 2013-01-10

Rev Recd Date: 2013-02-17

Publish Date: 2013-09-25

Key words:

Abstract: ECR was employed to etch the surface of monocrystalline silicon(100), etching effects and optical properties of low energy Ar+ ion beams with different ion energies and fluxes under normal ion incidence were studied. The experiment results indicate that, when ion flux density was 88-310 A/cm2 with ion beam energy of 1 000 eV, self-organizing nano dot structure appeared on the sample surface, orderly arrangement of the micro-structure was along with the increase in ion flux density; RMS decreased until the flux density was near 160 A/cm2, and then increased rapidly; The average transmittance of etched sample, within the range of near-infrared bands, was improved from 53% to more than 57%, which enlarged with the increase in orderliness of self-organizing nano-structure. When ion beam energy was 500-1 000 eV with ion flux density of 270 A/cm2, the tiny nano dot structure gradually formed, which tended to be concentrated and orderly with the increase of ion beam energy. If ion energy was going up below 1 100 eV, RMS slowly increased but rapidly reduced over the number. The transmittance of etched sample was sharply improved, with the increasing orderliness of self-organizing nano-structure. Etching rate was directly proportional to the square of ion flux energy. The pattern transformation of self-organizing nano-structure results from the interaction of spurting roughening and relaxation mechanism.

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[1]	Bobek T, Facsko S, Dekorsy T. Ordered quantum dot formation on GaSb surfaces during ion sputtering[J]. Nuclear Instruments and Methods in Physics Research, 2001, 178: 101-104.
[2]
[3]	Ziberi B, Frost F, Rauschenbach B. Pattern transitions on Ge surfaces during low-energy ion beam erosion[J]. Applied Physics Letters, 2006, 88: 173115.
[4]
[5]	Frost F, Ziberi B, Schindler A, et al. Ion beam assisted smoothing of optical surfaces[J]. Applied Physics Letters, 2004, 78 (2): 651.
[6]
[7]	Ziberi B, Frost F, Tartz M. Ripple rotation, pattern transitions, and long range ordered dots on silicon by ion beam erosion[J]. Applied Physics A, 2008, 92: 063102.
[8]
[9]
[10]	Frost F, Ziberi B, Schindler A, et al. Surface engineering with ion beams: from self-organized nanostructures to ultra-smooth surfaces[J]. Applied Physics A, 2008, 91(3): 551.
[11]	Takahiro K, Ozaki K, Kawatsura K, et al. Ion-induced self-organized ripple patterns on graphite and diamond surfaces[J]. Appl Surf Sci, 2009, 05: 103
[12]
[13]	Tan S K, Liu R, Sow C H. Self-organized nanodot formation on InP(100) by oxygen ion sputtering[J]. Nuclear Instruments and Methods in Physics Research B, 2006, 248: 83-89.
[14]
[15]	Park H, Choi H W, Choi W K. Nano patterning and structuring of InP(100) by low energy ion beam irradiation[J]. Surface Coatings Technology, 2007, 201: 8469-8476.
[16]
[17]	Oates T W H, Keller A, Noda S. Self-organized metallic nanoparticle and nanowire arrays from ion-sputtered silicon templates[J]. Applied Physics Letters, 2008, 93: 063106.
[18]
[19]
[20]	Li Haihua, Huang Kang, Wang Qingkang. Design of the wideband anti-reflective subwavelength nanostructures[J]. Infrared and Laser Engineering, 2011, 40(2): 267-270. (in Chinese)
[21]
[22]	Pan Feng, Chen Songlin, Ma Ping, et al. Bichromatic coatings with high laser-induced damage threshold[J]. Infrared and Laser Engineering, 2012, 41(2): 379-382. (in Chinese)
[23]	Ji Yiqin, Liu Huasong, Wang Zhanshan, et al. Influence of interface layer on antireflection coating for laser optics[J]. Infrared and Laser Engineering, 2011, 40(10): 2003-2007. (in Chinese)
[24]
[25]	Mark Bradley R, James Harper M E. Theory of ripple topography induced by ion bombardment[J]. Journal of Vacuum Science and Technology, 1988, 60(12): 4160-4164.

Surface topography and optical properties of monocrystalline silicon induced by low energy different ion beam parameters

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