Volume 42 Issue 4
Feb.  2014
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Yu Shengwang, An Kang, Li Xiaojing, Shen Yanyan, Ning Laiyuan, He Zhiyong, Tang Bin, Tang Weizhong. Preparation of diamond films as an infrared optical material by high power microwave plasma CVD[J]. Infrared and Laser Engineering, 2013, 42(4): 971-974.
Citation: Yu Shengwang, An Kang, Li Xiaojing, Shen Yanyan, Ning Laiyuan, He Zhiyong, Tang Bin, Tang Weizhong. Preparation of diamond films as an infrared optical material by high power microwave plasma CVD[J]. Infrared and Laser Engineering, 2013, 42(4): 971-974.

Preparation of diamond films as an infrared optical material by high power microwave plasma CVD

  • Received Date: 2012-08-10
  • Rev Recd Date: 2012-09-13
  • Publish Date: 2013-04-25
  • Polycrystalline diamond films were prepared by using H2-CH4 as the source gas in a newly developed ellipsoidal cavity type MPCVD reactor. The influence of CH4 concentration on the diamond growth and quality was studied in this paper. On the basis of the above research, large area optical grade free-standing diamond film was prepared. Surface and cross-sectional morphology as well as the quality of the diamond films were examined by scanning electronic microscopy and Raman spectroscopy. Furthermore, the infrared transmittance of the samples was measured by Fourier transform spectrometry. The results show that the growth rate of the diamond films increases with the increase of CH4 concentration. However, when the CH4 concentration is increased to certain level, the diamond growth rate will no longer increase. High quality diamond films can be prepared when the CH4 concentration is between 0.5%-2%. The results prove that high quality optical grade diamond films can be obtained by this newly developed ellipsoidal cavity type MPCVD reactor.
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    [2] Klein C A, Diamond windows and domes: flexural strength and thermal shock[J]. Diamond and Related Materials, 2002, 11(2): 218-227.
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    [4] Ando Y, Yokota Y, Tachibana T, et al. Large area deposition of 100-textured diamond films by a 60-kW microwave plasma CVD reactor[J]. Diamond and Related Materials, 2002, 11(3-6): 596-600.
    [5] Hemawan K W, Grotjohn T A, Reinhard D K, et al. Improved microwave plasma cavity reactor for diamond synthesis at high-pressure and high power density[J]. Diamond and Related Materials, 2010, 19(12): 1446-1452.
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    [8] Wang Fengying, Tang Weizhong, Jiang Chunsheng, et al. Ellipsoidal microwave plasma CVD reactor for diamond films deposition and preparation of diamond films[J]. Heat Treatment of Metals, 2009, 34(9): 20-24. (in Chinese)
    [9] Wang Fengying, Guo Huibin, Tang Weizhong, et al. Simulation and comparison of microwave plasma in cylindrical and ellipsoidal microwave plasma chemical vapor deposition cavity[J]. Journal of Synthetic Crystals, 2008, 37(4): 895-900. (in Chinese)
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    [12] Li Xiaojing, Yu Shengwang, Zhang Sikai, et al. Numerical simulation of plasma in novel plasma reactor for MPCVD diamond film[J]. Journal of Synthetic Crystals, 2010, 39(4): 867-871. (in Chinese)
    [13] Li X J, Tang W Z, Yu S W, et al. Design of novel plasma reactor for diamond film deposition[J]. Diamond and Related Materials, 2011, 20(4): 480-484.
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Preparation of diamond films as an infrared optical material by high power microwave plasma CVD

  • 1. Research Institute of Surface Engineering,Taiyuan University of Technology,Taiyuan 030024,China;
  • 2. The Ningbo Branch of Ordnance Science Institute of China,Ningbo 315103,China;
  • 3. School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China

Abstract: Polycrystalline diamond films were prepared by using H2-CH4 as the source gas in a newly developed ellipsoidal cavity type MPCVD reactor. The influence of CH4 concentration on the diamond growth and quality was studied in this paper. On the basis of the above research, large area optical grade free-standing diamond film was prepared. Surface and cross-sectional morphology as well as the quality of the diamond films were examined by scanning electronic microscopy and Raman spectroscopy. Furthermore, the infrared transmittance of the samples was measured by Fourier transform spectrometry. The results show that the growth rate of the diamond films increases with the increase of CH4 concentration. However, when the CH4 concentration is increased to certain level, the diamond growth rate will no longer increase. High quality diamond films can be prepared when the CH4 concentration is between 0.5%-2%. The results prove that high quality optical grade diamond films can be obtained by this newly developed ellipsoidal cavity type MPCVD reactor.

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