ICP etching in InAs/GaSb type Ⅱ superlattice infrared detector material

Chen Yongyuan; Deng Jun; Shi Yanli; Miao Pei; Yang Lipeng

ICP (Inductively Couple Plasma) etching in InAs/GaSb type Ⅱ superlattice infrared detector material with Cl2/Ar and SiCl4/Ar were studied. The results show that the etching depth is linear with etching time for both etching gases. The etching rate is 100 nm/min at a set of conditions: RF power of 50 W, SiCl4 flow for 3 sccm, Ar to 9 sccm, the standard operating pressure is 2 mTorr. The etching rate did not depend on the doping concentration. The Ar flow fluctuation has no significant effect on etching rate when using SiCl4/Ar as the etch gases. But this condition exists in Cl2/Ar, especially when the flow of Ar under 3 sccm, and the etching rate droped with the reduction of Ar flow.

1. Laboratory of Beijing Photoelectron Technology,Beijing University of Technology,Beijing 100124,China;

2. Kunming Institute of Physics,Kunming 650223,China

Received Date: 2012-06-12

Rev Recd Date: 2012-07-13

Publish Date: 2013-02-25

Key words:

Abstract: ICP (Inductively Couple Plasma) etching in InAs/GaSb type Ⅱ superlattice infrared detector material with Cl2/Ar and SiCl4/Ar were studied. The results show that the etching depth is linear with etching time for both etching gases. The etching rate is 100 nm/min at a set of conditions: RF power of 50 W, SiCl4 flow for 3 sccm, Ar to 9 sccm, the standard operating pressure is 2 mTorr. The etching rate did not depend on the doping concentration. The Ar flow fluctuation has no significant effect on etching rate when using SiCl4/Ar as the etch gases. But this condition exists in Cl2/Ar, especially when the flow of Ar under 3 sccm, and the etching rate droped with the reduction of Ar flow.

HTML

Reference (27)

[1]	Smith D L, Mailhiot C. Proposal for strained type Ⅱ superlattice infrared detectors[J]. Appl Phys, 1987, 62:2545-2548.
[2]
[3]
[4]	Chen Huijuan, Guo Jie, Ding Jiaxin, et al. Study of mesa etching for a inAs/GaSb superlattice infrared detectors[J]. Microscope, Measurement, Microfabrication Equipment, 2008, 45(5): 298-301. (in Chinese)
[5]	陈慧娟, 郭杰, 丁嘉欣, 等. InAs/GaSb超晶格红外探测器台面湿法腐蚀研究[J]. 显微、测量、微细加工技术与设备, 2008, 45(5): 298-301.
[6]	Wang Chenfei. New etching method in semiconductor craftICP[J]. Infrared, 2005(1): 17-22. (in Chinese)
[7]
[8]	Vander Drift E, Cheung R, Zijlstra T. Dry etching and induced damage[J]. Micro Electron Eng, 1996, 32(1-4): 241-253.
[9]
[10]	Kutty M N, Plis E, Khoshakhlagh A, et al. study of surface treaments on InAsGaSb superlattice LWIR detectors[J]. Electronic Materials, 2010, 39(10): 2203-2209.
[11]	王晨飞. 半导体工艺中的新型刻蚀技术ICP[J]. 红外, 2005(1): 17-22.
[12]	Pearton S J, Chakrabarti U K, Hobson W S, et al. Cl2 and SiCl4 reactive ion etching of In-based Ⅲ-Ⅴsemiconductors[J]. Electrochem Soc, 1990, 137(10): 3188-3202.
[13]
[14]	Zhang Guodong, Si Junjie, Wang Liuen. High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2[J]. Infrared and Laser Engineering, 2012, 41(4): 843-846. (in Chinese)
[15]
[16]	Nguyen J, Hill C J, Rafol D, et al. Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor[C]//SPIE, 2011, 7945: 79451.
[17]	Siew Li Tan, Yu Ling Goh, Sankha dip Das, et al. Dry etching and surface passivation techniques for type-Ⅱ InAsGaSb superlattice intrared detectors[C]//SPIE, 2010, 7838: 783814.
[18]
[19]
[20]	Giehl A R, Gumbel M, Kessler M, et al. Deep dry etching of GaAs and GaSb using Cl2/Ar plasma discharges[J]. Vac Sci Technol B, 2003, 21: 2393-2397.
[21]
[22]	Delaunay, Nguyen P Y, Hoffman B M, et al. Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structureInAs/GaSb superlattices[C]//SPIE, 2009, 7222: 72220W.
[23]	Elena Plis, Stephen Myers, Arezou Khoshakhlagh, et al. InAs/GaSb strained layer superlattice detectors with nBn design[J]. Infrared Physics Technology, 2009, 52: 335-339.
[24]
[25]
[26]
[27]

ICP etching in InAs/GaSb type Ⅱ superlattice infrared detector material

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Related

Proportional views