Electron radiation effect of LED

Zhou Yanping; Hao Na; Yang Rui; Che Chi; Jin Hao; Xu Jing

The effect of electron radiation on LED was studied. Making use of the electron beam from electron accelerator to simulate the space electron irradiation, test the energy electron was at 1.0 MeV and the maximal total dose at 1106 rad(Si). The optical, electrical and annealing properties were measured after radiation. The results showed that with the increase of radiation dose, LED's light power degenerated linearly, while its voltage increased, and the degenerate extent was diverse in different experimental conditions. In addition, after a period of annealing time, LED's capability recovered to some extent and kept stable. The experimental result was analyzed and discussed through the mechanism of electron radiation.

1. National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin 150001,China

Received Date: 2012-06-05

Rev Recd Date: 2012-07-03

Publish Date: 2013-02-25

Key words:

Abstract: The effect of electron radiation on LED was studied. Making use of the electron beam from electron accelerator to simulate the space electron irradiation, test the energy electron was at 1.0 MeV and the maximal total dose at 1106 rad(Si). The optical, electrical and annealing properties were measured after radiation. The results showed that with the increase of radiation dose, LED's light power degenerated linearly, while its voltage increased, and the degenerate extent was diverse in different experimental conditions. In addition, after a period of annealing time, LED's capability recovered to some extent and kept stable. The experimental result was analyzed and discussed through the mechanism of electron radiation.

HTML

Reference (31)

[1]
[2]	Benton E R, Benton E V. Space radiation dosimetry in low-earth orbit and beyond[J]. Nucl Instru Meth, 2001, 184B: 255.
[3]	Reitz C K, Schnuer K, Shaw K. Editorial-workshop on radiation exposure of civil aircrew[J]. Radiation Protection Dosimetry, 1993, 48(3):5.
[4]
[5]
[6]	Allan H. Johnston. Radiation effects in light-emitting and laser diodes[J]. IEEE Trans Nucl Sci, 2003, 50(3): 689-703.
[7]
[8]	Johnston A H, Miyahira T F. Characterization of proton damage in light-emitting diodes[J]. IEEE Trans Nucl Sci, 2000, 47(6): 2500-2507.
[9]
[10]	Pavesi M, Rossi F, Zanoni E. Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes[J]. Semicond. Sci. Technol, 2006, 21(2): 138-143.
[11]	Beringer J, Borner K, Mommsen R. K, et al. Radiation hardness and lifetime studies of LEDs and VCSELS for the optical readout of the ATLAS SCT[J]. Nucl Instru Meth, 1999, 435: 375-392.
[12]
[13]	Zhou Yanping, Chang Guolong, Ma Jing, et al. Influence of laser diodes cumulative radiation damage on bit error rate of space optical communication system[J]. Infrared and Laser Engineering, 2011, 40(3): 497-500. (in Chinese)
[14]
[15]	周彦平, 常国龙, 马晶, 等. 半导体激光器辐射损伤对空间光通信误码率的影响[J]. 红外与激光工程, 2011, 40(3): 497-500.
[16]	Bai Yun, Shao Xiumei, Chen Liang, et al. Effect of electron irradiation on the GaN based pin UV detector[J]. Infrared and Laser Engineering, 2008, 37(2): 270-273. (in Chinese)
[17]	Zhou Yanping, Wang Xiaoming, Chang Guolong, et al. Radiation experiment of CMOS image sensor[J]. Infrared and Laser Engineering, 2011, 40(7): 1270-1273. (in Chinese)
[18]
[19]
[20]	Cao Jianzhong. Radiation Effects on Semiconductor[M].Beijing: Science Press, 1993. (in Chinese)
[21]	Meng Qingju, Liu Haibo, Meng Qinghui. Physics of Semiconductor Devices[M]. Beijing: Science Press, 2005. (in Chinese)
[22]	白云, 邵秀梅, 陈亮, 等. GaN 基紫外探测器的电子辐照效应[J]. 红外与激光工程, 2008, 37(2): 270-273.
[23]
[24]
[25]	周彦平, 王晓明, 常国龙, 等. CMOS 图像传感器的辐射实验[J]. 红外与激光工程, 2011, 40(7): 1270-1273.
[26]
[27]
[28]	曹建中. 半导体材料的辐射效应[M]. 北京: 科学出版社, 1993.
[29]
[30]
[31]	孟庆巨, 刘海波, 孟庆辉. 半导体器件物理[M]. 北京: 科学出版社, 2005.

Electron radiation effect of LED

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Related

Proportional views