Zhu Bingjin, Lin Lei, Song Kaichen, Wang Jing. InSb infrared detector chip gold wire bonding process study[J]. Infrared and Laser Engineering, 2013, 42(1): 46-50.
| Citation:
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Zhu Bingjin, Lin Lei, Song Kaichen, Wang Jing. InSb infrared detector chip gold wire bonding process study[J]. Infrared and Laser Engineering, 2013, 42(1): 46-50.
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InSb infrared detector chip gold wire bonding process study
- Received Date: 2012-05-03
- Rev Recd Date:
2012-06-07
- Publish Date:
2013-01-25
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Abstract
The wire bonding quality of InSb infrared detector chip surface solder joint and external pin solder directly determines the reliability of the optical signal output. Ultrasonic power, bonding time and bonding force are the most important process parameters for the wire bonding quality. Based on the practical application, gold wire bonding was performed on a KS 4124 wire bonder with the gold plated pads, and the effects of these process parameters on bond shear force and the bonding region were studied. By analyzing the failure mode of bonding and the solder joints morphology, the optimum process parameters meeting InSb chip gold wire bonding quality requirements were obtained. This study has laid a solid foundation for the InSb chip wire bonding reliability.
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