Volume 43 Issue 2
Mar.  2014
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Chen Xiangqian, Peng Yan, Fang Dan, Zhou Yunyan, Liu Shuqi, Cai Bin, Zhu Yiming. Micro-structured silicon fabricated by femtosecond laser pulse for infrared sensor[J]. Infrared and Laser Engineering, 2014, 43(2): 398-403.
Citation: Chen Xiangqian, Peng Yan, Fang Dan, Zhou Yunyan, Liu Shuqi, Cai Bin, Zhu Yiming. Micro-structured silicon fabricated by femtosecond laser pulse for infrared sensor[J]. Infrared and Laser Engineering, 2014, 43(2): 398-403.

Micro-structured silicon fabricated by femtosecond laser pulse for infrared sensor

  • Received Date: 2013-06-12
  • Rev Recd Date: 2013-07-13
  • Publish Date: 2014-02-25
  • It is found that the black silicon fabricated by femtosecond laser in the vacuum is different from that fabricated in the gas atmosphere of SF6. To study the related optical properties of this micro-structured silicon fabricated in the vacuum, the changes of its peak height and absorptance were studied by changing the energy of laser pulse. It is found that the microstructures fabricated in the vacuum can also reach the absorptance of ~95% in the spectral range of 200-2 500 nm as that fabricated in the gas atmosphere of SF6. Finally, by annealing the black silicon fabricated in two different environments, the black silicon fabricated in the vacuum has better annealing resistance. These results are very significative for the fabrication of infrared sensor.
  • [1] Marios B, Vassilia Z, Alexios P, et al. Electrowetting properties of micro/nanostructures black silicon[J]. J Am Chem Soc, 2010, 26(15): 13007-13014.
    [2]
    [3] Peng Yan, Wen Ya, Zhang Dongsheng, et al. Optimal proportional relation between laser power and pulse number for the fabrication of surface-microstructured silicon[J]. Applied Optics, 2011, 50(24): 4765-4768.
    [4]
    [5] Peng Yan, Zhang Dongsheng, Chen HongYan, et al. Differences in the evolution of surface-microstructured silicon fabricated by femtosecond laser pulses with different wavelength[J]. Applied Optics, 2012, 51(5): 635-639.
    [6]
    [7]
    [8] Samet T, Halbwax M, Torres R, et al. Femtosecond laser for black silicon and photoxoltaic cells[C]//SPIE, 2008, 6881:688119.
    [9]
    [10] Hu Chuanxin, Hu Jiahui, Huang Jiqiang, et al. Nanosecond laser and mechanism primary analysis of Si-cell optoeletric conversion efficieny[J]. Infrared and Laser Engineering,2012, 41(12): 3226-3229. (in Chinese)
    [11] Cheng Zhengxi, Chen Yongping, Ma Bin. Electrical transport properties of black silicon thin film[J]. Infrared and Laser Engineering, 2012, 41(12): 3311-3317. (in Chinese)
    [12] 胡传炘, 胡家晖, 黄继强, 等. 纳秒激光与硅电池片光电转换效率变化及机理初步分析[J]. 红外激光与工程, 2012, 41(12): 3226-3229.
    [13] Peng Yan, Chen Hongyan, Zhu Chenggang, et al. The effect of laser wavelength on the formation of surface-microstructured silicon[J]. Materials Letters, 2012, 83(127): 127-129.
    [14]
    [15] Liu Changjiang. The fabrication of black silicon and its application in optoelectronic devices based on femtosecond laser non-equilibrium doping technique[D]. Jilin: Jilin University, 2012:15-16. (in Chinese)
    [16]
    [17] 程正喜, 陈永平, 马斌. 黑硅薄膜的电学输运特性[J]. 红外激光与工程, 2012, 41(12): 3311-3317.
    [18] Peng Yan, Hong Miao, Zhou Yunyan, et al. Influence of femtosecond laser pulse number on spike geometry of microstructured silicon[J]. Appl Phys Express, 2013, 6: 051303.
    [19] Wen Ya, Peng Yan, Zhang Dongsheng, et al. Effect of pulse energy of femtosecond laser on the formation of spikes on the silicon surface in the ambient gas of SF6[J]. Chinese J Lasers, 2012, 39(4): 0406001. (in Chinese)
    [20]
    [21] Jiang Jing, Wu Zhiming, Wang Tao, et al. A new revolutionary material-black silicon[J]. Materials Review, 2010, 24(4): 122-126. (in Chinese)
    [22]
    [23]
    [24] Crouch C H, Carey J E, Warrender J M, et al. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon[J]. Applied Physics Letters, 2004, 84(11): 1850-1852.
    [25] 刘长江. 基于飞秒激光非平衡掺杂技术黑硅材料的制备与光电器件研究[D]. 吉林: 吉林大学, 2012: 15-16.
    [26] Crouch C H, Carey J E, Shen M, et al. Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation[J]. Applied Physics Letters, 2004, 79: 1635.
    [27]
    [28]
    [29]
    [30] 温雅, 彭滟, 张冬生, 等. 飞秒激光脉冲能量对SF6气体环境下硅表面尖峰结构形成的影响[J]. 中国激光, 2012, 39(4): 0406001.
    [31]
    [32]
    [33] 姜晶, 吴志明, 王涛, 等. 革命性的新材料-黑硅[J]. 材料导报, 2010, 24(4): 122-126.
    [34]
    [35]
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Micro-structured silicon fabricated by femtosecond laser pulse for infrared sensor

  • 1. Engineering Research Center of Optical Instrument and System,Ministry of Education,Shanghai Key Lab of Modern Optical System,School of Optical-Electrical and computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China

Abstract: It is found that the black silicon fabricated by femtosecond laser in the vacuum is different from that fabricated in the gas atmosphere of SF6. To study the related optical properties of this micro-structured silicon fabricated in the vacuum, the changes of its peak height and absorptance were studied by changing the energy of laser pulse. It is found that the microstructures fabricated in the vacuum can also reach the absorptance of ~95% in the spectral range of 200-2 500 nm as that fabricated in the gas atmosphere of SF6. Finally, by annealing the black silicon fabricated in two different environments, the black silicon fabricated in the vacuum has better annealing resistance. These results are very significative for the fabrication of infrared sensor.

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