Damage threshold research of monocrystalline silicon solar cells under femtosecond laser illumination

Tian Xiuqin; Xiao Si; Tao Shaohua; Yuan Zhanzhong; Zhou Yanqiang

Femtosecond laser with ultrashort pulse (35 fs) was first applied to investigate damage threshold of a monocrystalline silicon solar cell. Compared with a continuous-wave laser of the same central wavelength, a femtosecond laser pulse was found to have a slightly higher damage threshold. Unlike nanosecond or picosecond lasers, the femtosecond laser has heating pulse time equal to or shorter than the electron- phonon coupling time. Thus, the thermal non-equilibrium effect becomes obvious, and the heat conduction phenomenon no longer meets the law of Fourier. In the damage threshold experiments, a beam shaping technique was applied for a femtosecond laser to generate uniform intensity distribution, which could prevent experimental deviation caused by great concentrated intensity distribution of a conventional laser pulse with the Gaussian profile.

1. Institute of Super Microstructure and Ultrafast Process,School of Physics and Electronics,Central South University,Changsha 410000,China

Received Date: 2013-07-17

Rev Recd Date: 2013-08-03

Publish Date: 2014-03-25

Key words:

femtosecond laser with ultrashort pulse /
silicon solar cells /
damage threshold /
beam shaping

Abstract: Femtosecond laser with ultrashort pulse (35 fs) was first applied to investigate damage threshold of a monocrystalline silicon solar cell. Compared with a continuous-wave laser of the same central wavelength, a femtosecond laser pulse was found to have a slightly higher damage threshold. Unlike nanosecond or picosecond lasers, the femtosecond laser has heating pulse time equal to or shorter than the electron- phonon coupling time. Thus, the thermal non-equilibrium effect becomes obvious, and the heat conduction phenomenon no longer meets the law of Fourier. In the damage threshold experiments, a beam shaping technique was applied for a femtosecond laser to generate uniform intensity distribution, which could prevent experimental deviation caused by great concentrated intensity distribution of a conventional laser pulse with the Gaussian profile.

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Damage threshold research of monocrystalline silicon solar cells under femtosecond laser illumination

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