Xu Zhengwen, Qu Yi, Wang Yuzhi, Gao Ting, Wang Xin. Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers[J]. Infrared and Laser Engineering, 2014, 43(4): 1094-1098.
Citation:
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Xu Zhengwen, Qu Yi, Wang Yuzhi, Gao Ting, Wang Xin. Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers[J]. Infrared and Laser Engineering, 2014, 43(4): 1094-1098.
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Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers
- Received Date: 2013-08-21
- Rev Recd Date:
2013-09-25
- Publish Date:
2014-04-25
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Abstract
The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer was designed for high-power, which prevents carrier leakage and increases electro-optical conversion efficiency. The properties of the 980 nm asymmetric waveguide quantum well structure lasers were numerically studied with a commercial LASTIP simulation program. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. The simulation results show that the asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure, so laser performance of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer has higher electro-optical conversion efficiency and laser output power.
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Proportional views
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