Laser-matter-interaction

Analysis of the impulse coupling characteristics of space debris irradiated by pulsed laser with big spot
Lin Zhengguo, Jin Xing, Chang Hao
2018, 47(12): 1243001. doi: 10.3788/IRLA201847.1243001
[Abstract](503) [PDF 1043KB](31)
The impulse coupling characteristics of space debris irradiated by pulsed laser with big spot was studied. The impulse coupling characteristics of planar debris under big and small spot irradiation were studied conservatively. The influence rules of shape and spot size under big spot irradiation on impulse coupling characteristics were studied. The rationality of theoretical research was verified by the experimental results. The results demonstrate that the impulse coupling coefficient with big spot radiation is higher than that of small spot radiation under the same laser power density. Impulse coupling coefficient under big spot irradiation is mainly affected by laser power density. The influence of spot size on impulse coupling coefficient is small. The theoretical calculation results of impulse coupling coefficient under big spot irradiation are closer to the experimental results. The above experimental results have certain guiding significance for the theoretical study of laser irradiated non-planar space debris.
Calculation and analysis of the thermal characteristic of the satellite load radiant plate irradiated by laser
Tang Jinying, Lei Wuhu, Ren Xiaodong, Zhang Kun, Zhang Mingxin
2018, 47(12): 1243002. doi: 10.3788/IRLA201847.1243002
[Abstract](510) [PDF 1792KB](28)
The change of temperature in satellite have a direct influence on the performance of electrical devices. Aiming at studying the performance of electrical devices due to temperature distribution of radiant plate, the mechanism of temperature dissipation of the radiant plate was analyzed based on its characteristics. The research on thermal effect of laser irradiation in a simplified model of radiant plate was done by using the finite element analysis software. The transient temperature distribution under pulsed laser radiation was got by numerical simulation of the surface temperature field. The pulsed laser was used as the radiation source to irradiate the radiant plate, based on analysis and study of the simulation results, it was founded that the temperature of the electronic device would rise by 64.5 K when there was no heat dissipation around the electrical devices. When the heat pipe radiator was in the maximum working performance, the thermal effect of pulsed laser irradiation would seriously affect the heat dissipation performance of the heat pipe,the abnormal work of the heat pipe would increase the temperature of the electronic device and affected the normal operation of the electronic devices. It lays a theoretical foundation for the influence of the temperature on the performance of electronic devices.
Thermal melting damage of thin film components induced by surface impurities and nodule defects
Yu Xia, Xu Jiao, Zhang Bin
2018, 47(12): 1243003. doi: 10.3788/IRLA201847.1243003
[Abstract](496) [PDF 1078KB](40)
In the high power laser system, surface impurities and nodule defects are the key factors causing laser-induced damage of thin film components. The influences and variations of surface impurities and nodule defects on the laser-induced damage of thin film components for different irradiation time and power density were analyzed by establishing the thermal analysis model of thin film components irradiated by continuous high power lasers. The results indicate that, when the surface impurities are irradiated by continuous high power lasers, and their size localizes within a certain range, the maximum temperature of the film components increases with the increasing of impurity size, and the large and shallow nodule defect seeds have a more obvious influence on the temperature rise of the film. With the increasing of the power density and the irradiation time, the range of the impurity size in which the surface impurities cause the thermal melting damage of the thin film components increases. Simultaneously, the range of the seed depth and size of the nodule defects causing the thermal melting damage of the thin film components is broaden.