Volume 42 Issue 1
Feb.  2014
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Zhu Bingjin, Lin Lei, Song Kaichen, Wang Jing. InSb infrared detector chip gold wire bonding process study[J]. Infrared and Laser Engineering, 2013, 42(1): 46-50.
Citation: Zhu Bingjin, Lin Lei, Song Kaichen, Wang Jing. InSb infrared detector chip gold wire bonding process study[J]. Infrared and Laser Engineering, 2013, 42(1): 46-50.

InSb infrared detector chip gold wire bonding process study

  • Received Date: 2012-05-03
  • Rev Recd Date: 2012-06-07
  • Publish Date: 2013-01-25
  • The wire bonding quality of InSb infrared detector chip surface solder joint and external pin solder directly determines the reliability of the optical signal output. Ultrasonic power, bonding time and bonding force are the most important process parameters for the wire bonding quality. Based on the practical application, gold wire bonding was performed on a KS 4124 wire bonder with the gold plated pads, and the effects of these process parameters on bond shear force and the bonding region were studied. By analyzing the failure mode of bonding and the solder joints morphology, the optimum process parameters meeting InSb chip gold wire bonding quality requirements were obtained. This study has laid a solid foundation for the InSb chip wire bonding reliability.
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    [2] Chao Yuqing, Yang Zhaojian, Qiao Hailing. Progress on technology of wire bonding[J]. Electronics Process Technology, 2007, 28(4): 205-210. (in Chinese)
    [3] Luo Hong. Failure analyses of InSb PV detector no Voc performance[J]. Laser Infrared, 2010, 40(7): 720. (in Chinese)
    [4] 晁宇晴, 杨兆健, 乔海灵. 引线键合技术进展[J]. 电子工艺技术, 2007, 28(4): 205-210.
    [5] Xu Shuli, Wang Haizhen. Wet-chamfering techniques for hybrid focal plane arrays[J]. Infrared and Laser Engineering, 2007, 36(S2): 107. (in Chinese)
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    [9] Jeng Y R, Aoh J N, Wang C M. Thermosonic wire bonding of gold wire onto copper pad using the saturated interracial phenomena[J]. Journal of Physics D: Applied Physics, 2001, 34, 24(21): 3515-3521.
    [10] 罗宏. 光伏型锑化铟红外探测器开路失效研究[J]. 激光与红外, 2010, 40(7): 720.
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    [13] 徐淑丽, 王海珍. 混成式InSb焦平面器件的湿法倒角技术研究[J]. 红外与激光工程, 2007, 36(S2): 107.
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InSb infrared detector chip gold wire bonding process study

  • 1. China Air to Air Missile Academy,Luoyang 471009,China

Abstract: The wire bonding quality of InSb infrared detector chip surface solder joint and external pin solder directly determines the reliability of the optical signal output. Ultrasonic power, bonding time and bonding force are the most important process parameters for the wire bonding quality. Based on the practical application, gold wire bonding was performed on a KS 4124 wire bonder with the gold plated pads, and the effects of these process parameters on bond shear force and the bonding region were studied. By analyzing the failure mode of bonding and the solder joints morphology, the optimum process parameters meeting InSb chip gold wire bonding quality requirements were obtained. This study has laid a solid foundation for the InSb chip wire bonding reliability.

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