许中杰, 程湘爱, 江天, 苗锡奎, 胡伟达, 陈效双. 强光辐照下面阵探测器响应特性全流程仿真框架研究[J]. 红外与激光工程, 2017, 46(S1): 56-62. DOI: 10.3788/IRLA201746.S106010
引用本文: 许中杰, 程湘爱, 江天, 苗锡奎, 胡伟达, 陈效双. 强光辐照下面阵探测器响应特性全流程仿真框架研究[J]. 红外与激光工程, 2017, 46(S1): 56-62. DOI: 10.3788/IRLA201746.S106010
Xu Zhongjie, Cheng Xiang'ai, Jiang Tian, Miao Xikui, Hu Weida, Chen Xiaoshuang. Whole process simulation framework of the illumination effects of intense light on the flat panel detectors[J]. Infrared and Laser Engineering, 2017, 46(S1): 56-62. DOI: 10.3788/IRLA201746.S106010
Citation: Xu Zhongjie, Cheng Xiang'ai, Jiang Tian, Miao Xikui, Hu Weida, Chen Xiaoshuang. Whole process simulation framework of the illumination effects of intense light on the flat panel detectors[J]. Infrared and Laser Engineering, 2017, 46(S1): 56-62. DOI: 10.3788/IRLA201746.S106010

强光辐照下面阵探测器响应特性全流程仿真框架研究

Whole process simulation framework of the illumination effects of intense light on the flat panel detectors

  • 摘要: 光电探测器的强光辐照效应是受到较多关注的物理问题之一。文中以红外面阵探测器为例,介绍了一种光电探测器强光响应特性的全流程仿真框架。框架包括光在光学系统中的传播、焦平面上的热传导和光电输运,以及后处理电路对光电流的处理及图像输出等多个物理过程。笔者试图通过接口的设计减小各个过程之间的耦合,以便适应不同物理过程的不同模型。文中给出了一些简单的仿真结果,重现了在之前的研究中发现的非常规响应现象。

     

    Abstract: The illumination effects of intense light on detectors are attracting wide interests. A whole process simulation framework of the illumination effects was introduced. The framework was consisted of four component, including the propagation of light, the heat transfer on FPA, the transport process of photodiode and the effects of post process circuit. We are attempting to reduce the coupling between each component through proper interface design, which leads to better adaptability for various physical models. A simple example with this framework was calculated. An analytic model including only diffracting effects was considered, and the differences of Gaussian and parallel light were discussed. In the heat transfer component, the Fourier's Law was introduced, and a simplified heat sink configuration was used. In the transport process component, the drift-diffusion equation including temperature effects was used to calculate the transport effects of photo diodes. The influences of neighboring pixels were neglected. In the post process circuit component, the Correlated Double Sample (CDS) configuration was used. The results show good agreement with previous work.

     

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